No abstract

Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules.Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.

No abstract

Hydrogen silsesquioxane spin-on-glass (SOG) is regarded as a potential low-k material for multilevel metallization (MLM) schemes. In this work we report on the properties of films which have been cured at different temperatures covering the range from 350°C to 850°C. It is found that the material remains in its microporous structures at the lower temperature while it can be strongly densified at increased thermal budgets. The slope of the dielectric constant indicates that care ought to be taken in subsequent metallization anneals in order to preserve the low-k values observed.