1996
DOI: 10.1557/proc-443-195
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Influence of the Cure Process on the Properties of Hydrogen Silsesquioxane Spin-On-Glass

Abstract: Hydrogen silsesquioxane spin-on-glass (SOG) is regarded as a potential low-k material for multilevel metallization (MLM) schemes. In this work we report on the properties of films which have been cured at different temperatures covering the range from 350°C to 850°C. It is found that the material remains in its microporous structures at the lower temperature while it can be strongly densified at increased thermal budgets. The slope of the dielectric constant indicates that care ought to be taken in subsequent … Show more

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Cited by 21 publications
(17 citation statements)
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“…[3][4][5][6][7][8][9][10][11][12] Used as gap-filling dielectric in advanced metallization, HSQs built-in microporosity results in reduced dielectric constant and thus lowers coupling capacitance between tightly pitched metal lines. The successful integration of HSQ into IC interconnnects requires a careful choice of materials together with heat-treatment optimization.…”
mentioning
confidence: 99%
“…[3][4][5][6][7][8][9][10][11][12] Used as gap-filling dielectric in advanced metallization, HSQs built-in microporosity results in reduced dielectric constant and thus lowers coupling capacitance between tightly pitched metal lines. The successful integration of HSQ into IC interconnnects requires a careful choice of materials together with heat-treatment optimization.…”
mentioning
confidence: 99%
“…As visualized in Figure 3(b), the film cured at 600°C shows a significantly increased integrated area of the hydroxyl absorption feature with respect to the film cured at 700°C, indicating an increased silanol content. [34] The presence of hydroxyl in non-oxidatively cured HSQ-based films has been previously observed by other groups, [20] who have hypothesized that the hydroxylation originates from rapid water uptake of the incompletely polymerized films after curing. In comparison to the thermal oxide, the film cured at 800°C retained a vibrational feature at 878 cm −1 wavenumber (circled feature in Figure 3(a)), which has previously been assigned to the Si-H bending vibrations [31,35] in a Si-rich oxide.…”
Section: Film and Interface Chemistrymentioning
confidence: 72%
“…The process generally relies on the deposition of a liquid hydrogen silsesquioxane (HSQ) containing precursor solution, followed by a thermal polymerization, forming a fully inorganic, SiO 2 ‐like surface film, which offers potential advantages in processing cost, ease of application, reduction of hazardous reaction products or film quality with respect to the incumbent deposition processes . Further, due to the gradual transformation from the resinous precursor to an inorganic ceramic, the process offers a wide range of possible coating properties, ranging from loosely bonded, hydrogenated films to highly polymerized and virtually hydrogen‐free coatings …”
Section: Introductionmentioning
confidence: 99%
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“…Introduction of the dual damascene process with a Cu layer and low-relative dielectric constant (low-k) film into the ULSI process is very effective in solving this problem. Thus, many low-k films have been proposed using several materials and deposition methods [2][3][4].…”
Section: Introductionmentioning
confidence: 99%