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We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

The effect of nitrogen addition on the growth rate, quality, and properties of polycrystalline diamond grown by microwave plasma assisted (MPA)CVD is investigated. Two series of experiments are performed at two different microwave power densities (40 and 110 W cm -3 ) using a 2.45 GHz cylindrical microwave reactor. The results show that the beneficial effect of nitrogen is more distinct at higher microwave power densities. To investigate the properties of polycrystalline diamond grown with nitrogen addition, a thick diamond disk of 50 mm diameter is grown with an addition of 50 ppm nitrogen using a 2.45 GHz ellipsoidal microwave reactor. The grown diamond disk has a thermal conductivity of 17.3 W cm -1 K -1 and dielectric loss tangent of 3.7 Â 10 -5 at a frequency of 170 GHz, and its parameters are suitable for application in microwave windows (e.g., gyrotron windows). Our results indicate that it is possible to achieve the increased (by a factor of 2.5) growth rates by nitrogen addition without significant degradation of diamond quality, and properties such as thermal conductivity and dielectric loss tangent.

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The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

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