Investigation of silicon-vacancy center formation during the CVD diamond growth of thin and delta doped layers

Abstract

The results of a study of the deposition of silicon-doped epitaxial diamond layers in a microwave CVD reactor to create silicon-vacancy color centers are presented. The relationship between the optical...

Growth Conditions and Substrate Misorientation Angle Dependences of Silicon Incorporation in Chemical Vapor Deposition Diamond

“…[ 7 ] The latter method does not damage the diamond crystal lattice and makes it possible to create SiV centers at any depth in the epitaxial layer. In our work, [ 8 ] we demonstrated the creation of a delta layer doped with silicon with a thickness of about 5 nm using the CVD method. This method of creation of SiV centers makes it possible to position them along the depth of the epitaxial layer with nanometer accuracy.…”

“…In these works, it was found that the dependence of the emission intensity of SiV centers on the percent ratio of silicon to carbon in the Si/C gas mixture has a nonmonotonic form. [ 8,11–13 ] With an increase of the Si/C ratio, the emission intensity of SiV centers in diamond first increases to a maximum value, which is observed at Si/C = 0.1%–2%, [ 8,11–13 ] and then decreases. Such a decrease of the emission intensity of SiV centers, as shown in ref.…”

“…Such a decrease of the emission intensity of SiV centers, as shown in ref. [8], is associated with a change in the mechanism of silicon incorporation into diamond. For samples doped with silicon at Si/C greater than 2%, a secondary Si 2 ion appears in the secondary ion mass spectrometry (SIMS) spectra of diamond, which indicates that the diamond is doped with a silicon dimer Si 2 .…”

“…Doping under these conditions leads to a decrease of the efficiency of SiV centers formation and a decrease of their photoluminescence intensity. When diamond is doped with silicon at Si/C less than 2%, an increase of the photoluminescence of SiV centers, the concentration of silicon in the grown layers, and the silicon lines emission intensity from the plasma [ 8 ] are observed with an increase of the percentage of silicon in the gas mixture.…”

Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions

“…For example, the spin state of the NV À center can easily be initialized and read out along with a long coherent time, which shows promising potential in the area of quantum communication. [9][10][11] The optical emission of SiV À centers exhibits a narrow ZPL width at room temperature that concentrates more than 70% of its signals, 12,13 which is a promising candidate for the application of a room-temperature single photon source. [14][15][16] And their different charged states could be mutually switched to each other.…”