Investigation of boron incorporation in delta doped diamond layers by secondary ion mass spectrometry

Lobaev, M. A.; Горбачев, А. М.; Vikharev, A. L.; Исаев, В. А.; Radishev, D.B.; Богданов, С. А.; Дроздов, М. Н.; Yunin, P. A.; Butler, James E.

doi:10.1016/j.tsf.2017.12.008

Cited by 16 publications

(20 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should be noted that the thickness of the layer shown in Figure is comparable to the characteristic scale of DRF of SIMS. Therefore, the measured SIMS profile is broadened in comparison with the real profile …”

Section: Resultsmentioning

confidence: 99%

“…The growth rate, as well as the nitrogen concentration, was determined by means of SIMS (secondary ion mass spectrometer TOF · SIMS‐5 by ION‐TOF (Münster, Germany)). The thickness of the doped layers was chosen much larger than the depth resolution function (DRF) of the SIMS, in order to reduce the error in measuring the nitrogen concentration and thickness of the layers by the SIMS method . Our approach, based on a series of experiments on a single substrate during one diamond growth process, allows us to eliminate the possible influence of the substrate on the results of the experiments.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Only recently has a diamond growth system been specifically designed for delta doping using very smooth starting diamond substrates. It has shown promising initial results, detailed in works by Butler and Lobaev et al For the first time to these authors’ knowledge resistances <10 kΩ sq −1 (1.1 to 7 kΩ sq −1 ) with mobilities from 16 to 120 cm 2 V −1 s −1 (approaching the predicted mobilities of 150 to 200 cm 2 V −1 s −1 ) have been consistently obtained. Their experimental setup is similar to others.…”

Section: Conductive Diamond For Fetsmentioning

confidence: 77%

Progress Toward Diamond Power Field‐Effect Transistors

Geis

Wade²,

Wuorio

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

Diamond's properties (highest thermal conductivity, high hole & electron mobilities, & high electric breakdown field) predict that diamond field‐effect transistors (FETs) will have superior high‐power high‐frequency performance over FETs formed in other semiconductors. The development of diamond FETs is limited by a lack of quality substrates & the high ionization energy of the primary dopant, boron (B). This high ionization energy results in a resistance too high for FETs. Fortunately, recent developments are addressing these shortcomings. Single‐crystal diamond substrates ≈4 inches have been demonstrated. Further, two approaches address the dopant issue. When the surface of diamond is terminated in H, a surface p‐type conductive layer forms. FETs made using this layer demonstrate competitive high‐frequency performance, though manufacturability of this type of device has yet to be worked out. The second solution to doping uses delta doping by B. A thin <2‐nm layer doped with B at >1020 cm−3 is sandwiched within undoped diamond. This structure mitigates B's high ionization energy by producing an acceptor subband with ≈100% of the B is ionized. Recent reports of delta‐doped diamond have channel resistances suitable for device applications. This article reviews the state of the art for FET and substrate development.

show abstract

“…On the other hand, a new generation of d-doped samples (with even sharper doping proles) will become available. 68,69 In any case, further work from both a theoretical and experimental standpoint will be necessary to determine whether diamond d-layer samples can be fabricated in which quantised conned states are observable.…”

Section: Resultsmentioning

confidence: 99%