Influence of CVD diamond growth conditions on nitrogen incorporation

Lobaev, M. A.; Горбачев, А. М.; Богданов, С. А.; Vikharev, A. L.; Radishev, D.B.; Исаев, В. А.; Чернов, В. В.; Дроздов, М. Н.

doi:10.1016/j.diamond.2016.12.011

Cited by 54 publications

(44 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The influence of diamond growth conditions, in particular substrate temperature, on the formation of NV centers was investigated in a previously published work . The production of delta layers with a high nitrogen concentration (greater than 10 19 cm −3 ) was demonstrated in our work . In this paper, we have studied nitrogen incorporation into diamond, the growth rate of epitaxial layers in dependence on the growth conditions, and the misorientation angle of the substrate surface.…”

Section: Introductionmentioning

confidence: 78%

“…The growth rate was 1.15–1.5 µm h −1 at a pressure of 60 Torr and 1.0–1.65 µm h −1 at a pressure of 80 Torr. We note that in our previous work, nitrogen‐doped layers were grown at a pressure of 40 Torr and a methane flux of 0.7–1.7 sccm. In comparison with the results of ref.…”

Section: Resultsmentioning

confidence: 99%

“…Before the CVD diamond growth, the substrates undergo preliminary treatment to obtain smooth and defect‐free surfaces, which includes mechanical polishing and subsequent ICP plasma processing to remove polishing defects. This procedure was described in detail in our paper . ICP etching up to 5 micron depth does not change the surface roughness but allows eliminating polishing damage.…”

Section: Methodsmentioning

confidence: 99%

“…We have continued studies of the nitrogen incorporation into diamond and the growth rate dependence on the growth conditions. In our previous work, the studies were carried out at a fixed pressure of 40 Torr. In this work, pressure of the gas mixture and the methane content was varied.…”

Section: Methodsmentioning

confidence: 99%

“…The growth of nitrogen‐doped diamond layers in all the experiments was carried out at a microwave power of 1.5 kW (microwave power density was 40 W cm −3 at gas pressure 40 Torr, defined by method described in ), and the remaining diamond growth conditions are summarized in Table . The substrate temperature was chosen to be 800 °C, at which nitrogen incorporation is high …”

Section: Methodsmentioning

confidence: 99%

See 4 more Smart Citations

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The nitrogen incorporation, diamond growth rate and fluorescence of as‐grown NV centers is studied at different CVD diamond growth conditions. Also, the influence of the misorientation angle is investigated. Heavily nitrogen doped layers are grown at different gas pressures and methane contents, with the maximum nitrogen concentration in the doped layer reaching 7 × 1019 cm−3. The ratio of NV center concentration to the total nitrogen content was determined. The studies are aimed to determine the conditions for creating ensembles with a high concentration of NV centers localized in diamond with nanometer accuracy.

show abstract

Section: Introductionmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Lobaev

Горбачев

Богданов

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Tailoring of Typical Color Centers in Diamond for Photonics

et al. 2020

View full text Add to dashboard Cite

On the demand of single‐photon entangled light sources and high‐sensitivity probes in the fields of quantum information processing, weak magnetic field detection and biosensing, the nitrogen vacancy (NV) color center is very attractive and has been deeply and intensively studied, due to its convenience of spin initialization, operation, and optical readout combined with long coherence time in the ambient environment. Although the application prospect is promising, there are still some problems to be solved before fully exerting its characteristic performance, including enhancement of emission of NV centers in certain charge state (NV− or NV0), obtaining indistinguishable photons, and improving of collecting efficiency for the photons. Herein, the research progress in these issues is reviewed and commented on to help researchers grasp the current trends. In addition, the development of emerging color centers, such as germanium vacancy defects, and rare‐earth dopants, with great potential for various applications, are also briefly surveyed.

show abstract

Relationship between Birefringence and Surface Morphology in Single‐Crystal Diamonds Grown by MPCVD

Yun

Guo

Lin

et al. 2018

Crystal Research and Technology

View full text Add to dashboard Cite

Single-crystal diamonds are successfully synthesized using microwave plasma chemical vapor deposition. A smooth and flat single-crystal surface is obtained by optimizing the size relationship between the seed substrate and the square hole of the shielding ring. When the sample grows higher than the polycrystalline diamond on the molybdenum holder, the surface becomes uneven. The polarization characteristics of two kinds of chemical vapor deposition (CVD) layers are compared between flat and uneven surfaces. Abnormal high-order birefringence occurs in both morphologies, which is related to the dislocation density in the CVD layers. The higher the dislocation density of the sample, the more obvious the high-order anomalous birefringence. High-pressure high-temperature seed substrates have obvious defects, such as dislocations, stacking faults, and boundaries of the growth sector, and these defects are mostly distributed at the edge of seed substrates. When the diamond surface demonstrates an edge-to-center morphology, the dislocations in the seed substrate, interface-induced dislocations, and dislocations formed in the growth layer begin to converge toward the central region of the CVD layer, which results in a smaller area of low stress in the center of the CVD layer. High dislocation density causes the crystal to have a mosaic structure and orientation deviation.

show abstract

Influence of CVD diamond growth conditions on nitrogen incorporation

Cited by 54 publications

References 20 publications

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions

Tailoring of Typical Color Centers in Diamond for Photonics

Relationship between Birefringence and Surface Morphology in Single‐Crystal Diamonds Grown by MPCVD

Contact Info

Product

Resources

About