Novel microwave plasma-assisted CVD reactor for diamond delta doping

Vikharev, A. L.; Горбачев, А. М.; Lobaev, M. A.; Muchnikov, A. B.; Radishev, D.B.; Исаев, В. А.; Чернов, В. В.; Богданов, С. А.; Дроздов, М. Н.; Butler, James E.

doi:10.1002/pssr.201510453

Cited by 53 publications

(35 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Delta layers doped with boron were grown in homemade CVD reactor, described in detail in [1]. The reactor consists of a cylindrical cavity with a quartz tube placed on its axis.…”

Section: Methodsmentioning

confidence: 99%

Dependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle

et al. 2017

View full text Add to dashboard Cite

IntroductionDiamond is a promising material for the next generation of high-power and high-frequency semiconductor devices. In terms of its physical properties: high carrier saturation velocity (2.7·10 7 cm/s), high electron and hole mobility at low doping level, and record thermal conductivity, diamond significantly exceeds other semiconductor materials. Diamond is a wide-band gap semiconductor/insulator (band gap of about 5.5 eV), and partly because of this, all known dopants create the deep-lying levels with high activation energy. At room temperature only a very small fraction of the dopants are ionized. To create an acceptable level of conductivity, it is necessary to increase the level of doping, which inevitably leads to a decrease of the carrier mobility in diamond. To solve the problem of diamond doping the delta-layer technology is being developed. A nanometer thin layer of highly boron-doped diamond (the thickness of a few nanometers, N B > 10 20 cm -3 ) is introduced in the undoped highquality defect-free diamond. The achievement of high carrier mobility in this region requires the realization of sharp boundaries between doped and undoped material. This has been a rather difficult experimental problem. In this paper, we present the results of investigation of the boron incorporation into diamond delta doped layers as a function of the growth conditions and misorientation angle. ExperimentDelta layers doped with boron were grown in homemade CVD reactor, described in detail in [1]. The reactor consists of a cylindrical cavity with a quartz tube placed on its axis. Inside the tube there is a substrate holder, over which a plasma is created using a magnetron at a frequency of 2.45 GHz. Inside the quartz tube, a laminar vortex-free gas flow is maintained at a flow of 900 sccm, which makes it possible to rapidly switch the composition of the gas mixture. Non-doped diamond is grown in a gas mixture of H 2 +CH 4 (CH 4 /H 2 = 0.1%). To grow the delta layer, this mixture rapidly (in comparison with the characteristic growth time of the diamond) changed to a gas mixture containing boron H 2 +CH 4 +B 2 H 6 (CH 4 /H 2 = = 0.1%, B 2 H 6 /H 2 = 0.1%) using a gas switch. The characteristic time for changing the composition of the gas mixture was found to be about 5 seconds. Typical epitaxial diamond growth rates were 40 to 80 nm/h. Due to presence of residual boron in the reactor the undoped diamond layers had low boron concentration, typically 10 17 cm -3 or less, an amount which has little impact on the carrier mobility. Addition of hydrogen sulfide to gas mixture was used as a chemical getter to decrease the residual boron contamination during growth of undoped layers [2].For the growth of CVD diamond delta layers doped with boron, IIa type high pressure high temperature (HPHT) grown diamond substrates from New Diamond Technologies with (100) orientation and size 3.0×3.0×0.5 mm were used. These substrates are nearly strain free as observed through crossed polarizers, with very low dislocation densities (ca. 10 2 ...

show abstract

“…Delta layers doped with boron were grown in homemade CVD reactor, described in detail in [1]. The reactor consists of a cylindrical cavity with a quartz tube placed on its axis.…”

Section: Methodsmentioning

confidence: 99%

Dependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The novel microwave plasma assisted CVD reactor for growth of nanometric boron delta-doped layers with ultra-sharp interfaces between doped/undoped materials was built in IAPRAS [1]. Fig.…”

Section: Methodsmentioning

confidence: 99%

“…To achieve high electronic properties (obtaining high hole mobility and conductivity of the layer), it is necessary to realize sharp boundaries between the doped and undoped materials. Recently, this problem has been successfully solved [1,2]. This report provides an overview of the results of studies on the growth of electronic-quality epitaxial layers of diamond, the production of heavily boron-doped layers and the study of their characteristics.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

CVD diamond with boron-doped delta-layers deposited by microwave plasma

et al. 2017

View full text Add to dashboard Cite

IntroductionThe semiconductor single-crystal CVD diamond (obtained from the gas phase during homoepitaxial deposition) is a wide band gap semiconductor with a gap width of 5.5 eV. CVD diamond has unique characteristicshigh mobility of charge carriers, high carrier saturation speed, high electric breakdown field, the greatest thermal conductivity, high radiation and chemical resistance. On a combination of properties the CVD diamond is superior to other wide band gap semiconductors and is considered a promising material for the creation of a new generation of high-power and high-frequency electronic devices. The main difficulty in realization of the potential of CVD diamond as an electronic material is the problem of creating charge carriers inside it. Compared with conventional semiconductors, dopants in diamond have deeper energy levels that significantly impede the activation of the dopant (the degree of ionization of the dopant at room temperature is less than 1%). Thus, in order to create an acceptable level of conductivity, it is necessary to increase the level of doping, but in case of boron doping this leads to a decrease of carriers (holes) mobility in diamond. To solve the problem of boron doping of CVD diamond, an approach based on delta-doping technology is known. A thin layer of diamond heavily doped with boron (having a thickness of 1-2 nm and concentration of boron atoms higher than 5×10 20 cm -3 ) is formed inside an undoped defect-free diamond of high quality. To achieve high electronic properties (obtaining high hole mobility and conductivity of the layer), it is necessary to realize sharp boundaries between the doped and undoped materials. Recently, this problem has been successfully solved [1,2]. This report provides an overview of the results of studies on the growth of electronic-quality epitaxial layers of diamond, the production of heavily boron-doped layers and the study of their characteristics. ExperimentsThe novel microwave plasma assisted CVD reactor for growth of nanometric boron delta-doped layers with ultra-sharp interfaces between doped/undoped materials was built in IAPRAS [1]. Fig. 1 shows a schematic of the reactor. The main features of the reactor are: 1) rapid gas switching; 2) laminar gas flow; 3) axial symmetric resonant mode -symmetric discharge; 4) slow growth of diamond 40-100 nm/h. We achieve rapid gas switching from one input gas to another by a home-made electronic switch. The residence time of the reactor is approximately 5 s.In developed reactor the diamond deposition regimes in which one obtains thin doped delta layers with thickness of 1-2 nm with concentrations of boron about 5·10 20 cm -3 were found. Typical parameters of the delta layer under these conditions are given in Fig. 2 for the SS6-1 sample, in which the boron concentration is 4.8·10 20 cm -3 and thickness is 1 nm.Measurement of the boron concentration in the grown samples was carried out by the secondary ion mass spectroscopy (SIMS) method using a time of flight SIMS setup (IONTOF TOF.SIMS-5). The dep...

show abstract

“…Для однородного легирования бором CVD алмаза бор добавлялся в состав газовой смеси с помощью специально разработанного барботера, поз-воляющего подавать поток несущего газа (водорода) через раствор триметилбората B(OCH 3 ) 3 в этаноле. Для создания в CVD алмазе сильно легированных δ-слоев использовалась созданная в ИПФ РАН установка [13]. Установка позволяла получать δ-легированные слои на-нометровой толщины за счет ламинарного потока и быстрого переключения газов.…”

Section: методика экспериментаunclassified

Атомный Состав И Электрофизические Характеристики Эпитаксиальных Слоев CVD Алмаза, Легированных Бором

Суровегина¹,

Демидов²,

Дроздов³

et al. 2016

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Приведены результаты анализа атомного состава, уровня легирования и подвижности дырок в эпитак-сиальных слоях CVD (chemical vapor deposition) алмаза при легировании бором. Показаны возможности однородного легирования бором в диапазоне от 5 · 10 17 до ∼ 10 20 ат/см 3 и δ-легирования с поверхностной концентрацией (0.3 − 5) · 10 13 ат/см 2 . Определены режимы прецизионного ионного травления структур, сформированы барьерные и омические контакты к слоям.

show abstract

Novel microwave plasma-assisted CVD reactor for diamond delta doping

Cited by 53 publications

References 22 publications

Dependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle

Dependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle

CVD diamond with boron-doped delta-layers deposited by microwave plasma

Атомный Состав И Электрофизические Характеристики Эпитаксиальных Слоев CVD Алмаза, Легированных Бором

Contact Info

Product

Resources

About