Articles you may be interested in N 2 O-grown oxides/ 4 H-SiC (0001), (03 3 ¯ 8) , and (11 2 ¯ 0) interface properties characterized by using ptype gate-controlled diodes Appl.

The premier observation on the enhanced light emission from such a metal-SiO(x)-Si light emitting diode (MOSLED) with Si nano-pyramids at SiO(x)/Si interface is demonstrated at low biases. The Si nano-pyramids exhibits capability in providing the roughness of the SiO(x)/Si interface, and improving the Fowler-Nordheim (F-N) tunneling mechanism based carrier injection through the novel SiO(x)/nano-Si-pyramid/Si structure. HRTEM analysis reveals a precisely controllable size and concentration of the crystallized interfacial Si nano-pyramids at 10nm(height)x10nm(width) and within the range of 10(8)-10(11) cm(-2), respectively. With these Si nano-pyramids at a surface density of up to 1012/cm(2), the F-N tunneling threshold can be reduce from 7 MV/cm to 1.4 MV/cm. The correlation between surface density of the interfacial Si nano-pyramids and the threshold F-N tunneling field has been elucidated. Such a turn-on reduction essentially provides a less damaged SiO(x)/Si interface as the required bias for the electroluminescence of the MOSLED is greatly decreased, which thus suppresses the generation of structural damage related radiant defects under a lower biased condition and leads to a more stable near-infrared electroluminescence with a narrowing linewidth and an operating lifetime lengthened to >3 hours. An output EL power of nearly 150 nW under a biased voltage of 75 V and current density of 32 mA/cm(2) is reported for the first time.

Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.

The defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) of a metal-oxide-semiconductor (MOS) diode made on 500-nm-thick Si-ion-implanted SiO2 (SiO2:Si+) on Si substrate are demonstrated. A multienergy/multidose implantation and 1100 °C annealing process is employed to enhance the 415–455 nm PL contributed by weak oxygen bond and neutral oxygen vacancy defects. The Ag/SiO2:Si+/n-Si/Ag MOS diode exhibits a negative-differential resistance effect with threshold field strength of 300 kV/cm. The threshold pulsed current of deep-blue EL from Ag/SiO2:Si+/n-Si/Ag diode is 280 mA (or 3 V), which turns to white-light emission at saturation current of 680 mA and further shifts to green as the biased current increases up to 3 A. The 3 dB power decay within 3 h is also observed.

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