High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

Abstract

Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.

Technology and Applications of Micro-LEDs: Their Characteristics, Fabrication, Advancement, and Challenges

“…158,159 In 2021, Guo's group developed a high-efficiency full-color QD μLED array with a nanopore structure. 160 Figure 25a and 25b illustrates the fabrication process of the μLED epitaxial wafer and the electrochemical method for fabricating nanopores. They also utilized low-temperature ALD to passivate QDs to improve the reliability of QDs.…”

“…(d) Characteristics of the μLED with nanopores. Reprinted with permission from ref . Copyright 2021 MDPI .…”

“…64,126,[138][139][140][141]147,149 SEPD and filling of QDs in nanoporous μLEDs have also been developed. 152,154,160 To turn μLEDs into a game changer in the display market, in addition to the urgency and necessity to improve viable mass transfer technologies, the colorconversion technology can effectively alleviate the dilemma of mass transfer technologies.…”

Research on Simulation Design of MOS Driver for Micro-LED

“…The micro light emitting diode (Micro-LED) refers to a high-density, integrated LED array [1]. A micro-LED display uses inorganic LED devices as light-emitting pixels to realize an active light-emitting matrix display, which surpasses the current mainstream liquid crystal (LCD) and organic light-emitting diode (OLED) displays, in terms of power consumption, resolution, contrast and life, and represents significant progress in the area of display fields [2][3][4].…”

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

“…Recently, GaN-based light-emitting diodes (LEDs), one of the most important optoelectronic devices, have attracted much attention owing to significant progress in related material growth and device manufacturing fields [1][2][3][4][5]. The external quantum efficiency (EQE) of high-performance GaN-based LEDs has been recorded to exceed 80%, and they have been extensively used in applications such as general illumination, displays, and communications [6,7].…”