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Micro-LED display technology has been considered a promising candidate for near-eye display applications owing to its superior performance, such as having high brightness, high resolution, and high contrast. However, the realization of polarized and high-efficiency light extraction from Micro-LED arrays is still a significant problem to be addressed. Recently, by exploiting the capability of metasurfaces in wavefront modulation, researchers have achieved many excellent results by integrating metasurface structures with Micro-LEDs, including improving the light extraction efficiency, controlling the emission angle to achieve directional emission, and obtaining polarized Micro-LEDs. In this paper, recent progressions on Micro-LEDs integrated with metasurface structures are reviewed in the above three aspects, and the similar applications of metasurface structures in organic LEDs, quantum dot LEDs, and perovskite LEDs are also summarized.

This study assessed the extent to which social sexism affects Chinese women's perception and evaluation of other women's performance. A sample of 100 college women was selected in a top university in Beijing, China, and was asked to read six scholastic essays and then evaluate the quality of the essays and competence of the authors. Male and female names were randomly assigned as authors of the essays, and the respondents were blind to the arrangement. Results showed that the essays assumed to be written by male authors did not receive higher scores than those assumed to be written by female authors on quality or competence items. Sexism is not marked among these highly educated young women.

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In this letter, the suppression of dynamic on-state resistance (RON) degradation for faster dynamic RON recovery is achieved by the multimesa-channel (MMC) structure in AlGaN/GaN high electron mobility transistors. The measurement results are discussed with the physical mechanisms investigated. The initial transient RON degradation is reduced in the MMC structure, resulting from the lower peak electric field around the drain-side gate edge in the trigate structure compared to that in a planar device. The faster dynamic RON recovery in MMC devices is attributed to the quick emission of electrons at sidewall traps of shallower energy levels. The energy levels of dominant traps at the sidewall and top interfaces are found to be 0.26 eV and 0.37 eV below the conduction band edge, respectively, verified by Technology Computer Aided Design simulations in agreement with the measurement data.

This paper reports a novel HEMT structure that includes a built-in light emitter through band-to-band radiative recombination that is provided via holes from the p-GaN layer and electrons from the 2DEG. The electrical switching and illumination functions are able to be combined into a single device. The peak of the emitted light spectrum is located at 365 nm, corresponding to the bandgap of the GaN layer. This device uses a simple and cost-effective process, and shows the possibility for use in applications such as optical interconnects and optoelectronic integrated circuits. INDEX TERMS GaN, HEMT, light emitting devices, two-dimensional electron gas.