Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Song; Wang, Zirui; Jin, Xiaosheng; Lee, Yang; Zhang, Bo

doi:10.1016/j.spmi.2018.03.063

Cited by 17 publications

(6 citation statements)

References 20 publications

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“…Several strategies for improving GaN HEMT performance have already been reported. [5][6][7][8][9] The T-gate HEMT outperforms conventional HEMT in terms of current, breakdown voltage, and RF performance. 10 The significance of the RF power amplifier (PA) in wireless communication systems is very crucial.…”

Section: Introductionmentioning

confidence: 99%

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Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this piece of work, a recessed gate field-plated AlGaN/AlN/GaN HEMT on β-Ga 2 O 3 substrate is proposed and its performance characteristics are compared with HEMT structure employing a recessed gate (depth of 25, 30 and 35 nm) without field-plate. The device is simulated to obtain breakdown voltage, microwave frequency characteristics (f T , f max ) and JFOM using Atlas TCAD. The cut-off frequency and maximum frequency of oscillations are 420 and 720 GHz, respectively, which are excellent than those reported in recent studies. For 20 nm gate length, the suggested HEMT achieves the maximum JFOM of 45.3 THz-V. These f T , f max and JFOM demonstrate that the proposed HEMT on β-Ga 2 O 3 substrate is an excellent candidate for emerging microwave and millimetre wave applications.

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Section: Introductionmentioning

confidence: 99%

“…Generally, HEMTs are used in power‐switching applications having greater breakdown voltage. Several strategies for improving GaN HEMT performance have already been reported 5–9 . The T‐gate HEMT outperforms conventional HEMT in terms of current, breakdown voltage, and RF performance 10 …”

Section: Introductionmentioning

confidence: 99%

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Rao

Singh²,

Lenka

et al. 2022

Int J RF Mic Comp-Aid Eng

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“…Gate geometric engineering is a well known technique to enhance the performance of RF and high power devices. Assorted gating effects are achieved using i) T-gate [11] ii) Pi-gate [12] iii) gamma gate [13] iv) camel gate [14] v) gate field plate [15] vi) discrete field plate [16] vii) and multiple grating field plate [17]. The extension of gate head serves as a gate field plate.…”

Section: Introductionmentioning

confidence: 99%

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

Fletcher

Nirmal

Ajayan³

et al. 2021

Silicon

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The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×10 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

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“…Recently, many novel GaN diodes, approaching low V T and simultaneously high breakdown voltage (BV), have been reported utilizing strategies including hybrid anode [7], lowwork-function anode [8], trench anode [9], heterojunction engineering [10], and fluorine ion implantation [11]. Although lowering anode work function enables opportunities, it suffers from poor reverse blocking as a result of lower Schottky barriers.…”

Section: Introductionmentioning

confidence: 99%

“…Still, FP fails to protect fragile anodes because of a long distance, or to be more specific, a risk of breakdown before FP working. To relieve this contradiction, naturally, the diode with recessed FP is explored [8]. Whereas, not to mention the lattice hurt introduced by the recess process, the accuracy of the depth of the FP tosses a dramatic influence on the performance of the diode [8].…”

Section: Introductionmentioning

confidence: 99%

Approaching ultra-low turn-on voltage in GaN lateral diode

Wang

Yang

Shi

et al. 2020

Semicond. Sci. Technol.

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Besides the commercial success in power electronics, GaN-based devices are also considered as a promising candidate in sensors or high-frequency applications. In such applications, ultra-low turn-on voltage (V T) is highly demanded to realize low power consumption and high sensitivity. In this paper, we approach ultra-low V T in a novel Γ-shaped anode AlGaN/GaN Schottky barrier diode (SBD) using an ultra-thin barrier (UTB) and fluorine ions implantation (FI). Benefiting from the low-work-function anode and UTB, the proposed device exhibits ultra-low V T that is lower than 0.1 V. Simultaneously, the trenched anode plate and FI region provide a good reverse blocking capability. According to the numerical analysis, when the fluorine ions implantation length (L FI) is 3 μm and the fluorine ions concentration (N FI) is 1 × 10 18 cm−3, a favorable Baliga figure-of-merits (BFOM) of 33.0 KW mm−1 can be achieved. Compared to the conventional SBD and the SBD with pure Γ-shaped anode, the proposed device experiences at least 90% enhancement of BFOM, rendering the proposed ΓF-SBD performs potential in high-power and high-frequency applications such as microwave sensing and wireless power transmission.

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Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

Cited by 17 publications

References 20 publications

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

Approaching ultra-low turn-on voltage in GaN lateral diode

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Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

Cited by 17 publications

References 20 publications

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

Approaching ultra-low turn-on voltage in GaN lateral diode

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Product

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Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications