Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

Ren, Kailin; Liang, Yung C.; Chen, Huang-Chin

doi:10.1109/ted.2018.2809517

Cited by 21 publications

(10 citation statements)

References 28 publications

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“…Therefore, this kind of multigate structure have been put forward as strong contender to replace planer-gate structure for millimeter-wave PAs [19][20][21]. Recently, Ohi et al [22] and other research groups [23][24][25][26][27][28][29] have demonstrated that the threshold voltage (V th ) could be shifted towards positive direction by reducing the channel width laterally. As a result, normally-off GaN-based Fin-HEMT with V th up to 2.1 V can be produced.…”

Section: Introductionmentioning

confidence: 99%

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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In the present work, we have proposed a GaN based trigate HEMT with AlGaN back-barrier (BB) layer that effectively suppress the punch-through effects as compared to the conventional device without back-barrier layer. Furthermore, the device performance of the proposed structure has been studied by varying the distance (tch) between AlGaN (barrier)/GaN (channel) to AlGaN (BB)/GaN (channel) interface from 100nm to 500nm. It is observed that the optimization of barrier/channel – to – BB/channel distance(tch) is beneficial for minimizing the off-state leakage current and thereby, a high ON/OFF ratio (~108) and nearly ideal subthreshold slope (~64mV/decade to ~66mV/decade) is achieved. Subsequently, it is shown that the optimized distance of tch = 300nm results in superior breakdown voltage (~198V) and cut-off frequency (~81GHz), leading to excellent Johnson figure-of-merit (JFOM). The proposed device promises great potential for use in next generations high-power microwave applications.

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Section: Introductionmentioning

confidence: 99%

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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“…1(d)). From computer-based simulation in the literature [13], the calculated V th of the sidewall MOS channel is expected to be approximately 0.3 V caused by the sidewall depletion regions. The bulk current through the neutral channel in the center of the GaN Fin (bulk channel) can be further shifted the V th to the positive direction depending on the W Fin .…”

Section: Characterization Results and Discussionmentioning

confidence: 99%

“…The fabricated AlGaN/GaN FinFETs showed superior device performances, such as the excellent off-state performances and broaden transconductance (g m ) with the reduced current collapse, due to the coupling effect of two channels and the improved gate controllability. In addition, Fin width (W Fin ) dependent physical models for AlGaN/GaN FinFETs were proposed in order to verify the experimental data from the literatures [10], [11], [12] and derive the equation of V th and drain current (I d ) for 2DEG and MOS channels [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction

2023

IEEE Access

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AlGaN/GaN Fin-shaped field-effect transistors (FinFETs) with nano-sized Fin width (W Fin ) from 20 nm to 230 nm are characterized using low-frequency noise (LFN) measurement. All devices exhibit 1/f noise shape with Hooge mobility fluctuations (HMF) at subthreshold region and carrier number fluctuations (CNF) at accumulation region. However, the lowest normalized drain current noise spectral densities (S Id /I 2 d ) are obtained in the narrow Fin device (W Fin = 20 nm). This is due to significant contribution of bulk channel without the 2-dimensional electron gas density (2DEG) channel and two sidewall metal-oxide-semiconductor (MOS) channels. It is also noticed that the lowest trap density (N t ) and a large separation in CNF noise model clearly indicate to the volume accumulation effect caused by bulk conduction in narrow device. The Hooge constants (α H ) extracted by HMF noise model for the narrow device are one-order higher than those of the wide Fin device, which tells that the narrow device suffers from the strong phonon scattering in the bulk channel. From the product of (S Id × frequency (f )) versus I d curves, the volume accumulation phenomenon is also clearly observed in narrow Fin device.INDEX TERMS AlGaN/GaN FinFET, fin width, low-frequency noise, bulk conduction, volume accumulation.

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“…Whereas, in FinFETs, the role of side gates is significant in determining the overall characteristics of the device and thus, cannot be ignored. On the other hand, models reported in the literature [13][14][15] for AlGaN/GaN FinFETs deal with the devices having oxide based insulated gate and, to the best of our knowledge, there is no reported model which deals with metal Schottky barrier gate FinFETs in the absence of oxide layer. For this purpose, three dimensional (3D) Poisson equation is solved for FinFET changed geometry to get the potential across the 2DEG plane, which controls n s concentration and hence the channel current.…”

Section: Introductionmentioning

confidence: 98%

A modified analytical model for AlGaN/GaN FinFETs I – V characteristics

Ahmed

Memon

2020

Semicond. Sci. Technol.

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In this paper, a high electron mobility transistor's (HEMT) analytical model, which is based on the vertical operation of Schottky barrier gate, has been modified for the I−V characteristics of rectangular shaped AlGaN/GaN FinFETs having three-sided Schottky barrier gate operation. The proposed model includes the effect of the tri-gate structure on sheet carrier concentration (n s ) of the device. A three dimensional Poisson equation is solved keeping in view, the device geometry and applied potentials, to get the effect of the side gates on n s . It is demonstrated that n s of a FinFET depletes relatively faster than its HEMT counterpart due to the extra fields caused by the side gates. Knowing bias dependent n s , FinFET I−V expressions are developed and tested on AlGaN/GaN FinFETs of varying gate lengths (L g =0.4 -1.0 μm) for the above threshold regime. A good agreement between the experimental and modeled characteristics is observed, which demonstrates the validity of the proposed model in predicting the DC characteristics of tri-gate AlGaN/GaN FinFETs.

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Compact Physical Models for AlGaN/GaN MIS-FinFET on Threshold Voltage and Saturation Current

Cited by 21 publications

References 28 publications

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction

A modified analytical model for AlGaN/GaN FinFETs I – V characteristics

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