In the present work, we have proposed a GaN based trigate HEMT with AlGaN back-barrier (BB) layer that effectively suppress the punch-through effects as compared to the conventional device without back-barrier layer. Furthermore, the device performance of the proposed structure has been studied by varying the distance (tch) between AlGaN (barrier)/GaN (channel) to AlGaN (BB)/GaN (channel) interface from 100nm to 500nm. It is observed that the optimization of barrier/channel – to – BB/channel distance(tch) is beneficial for minimizing the off-state leakage current and thereby, a high ON/OFF ratio (~108) and nearly ideal subthreshold slope (~64mV/decade to ~66mV/decade) is achieved. Subsequently, it is shown that the optimized distance of tch = 300nm results in superior breakdown voltage (~198V) and cut-off frequency (~81GHz), leading to excellent Johnson figure-of-merit (JFOM). The proposed device promises great potential for use in next generations high-power microwave applications.
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