The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies of 0.6 and 0.74 eV under blackbody radiation is performed on the basis of the combination of measurement with theoretical calculation. Efficiencies of 19.1% for the 0.6 eV InGaAs cell and 16.4% for the 0.74 eV InGaAs cell are obtained at the radiation temperature of 1323 K. The notable differences in reverse saturation current density and ideality factors under the blackbody radiation and standard solar spectrum illumination indicate the significant effect of the radiation spectrum on the detailed understanding of devices.
In this work, large-area continuous monolayer-MoS2 and triple-layer-PtSe2 films are grown on Si substrates by chemical vapor deposition and the MoS2/PtSe2 heterostructures are fabricated using transfer technology. The energy band alignment at the heterojunction is investigated by employing x-ray photoelectron spectroscopy measurements, indicating a type-I band formed at the interface. The conduction and valence band offsets are determined to be 0.85 eV and 0.66 eV, respectively, which is consistent with the results deduced from the electron affinity. Furthermore, the enhancing improvement of light absorption in the visible region implies that this heterostructure has great potential in optoelectronic applications. This study provides promising guidance for the related device design and fabrication.
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