Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2

Lin, Gong−Ru; Lin, Chun‐Jung; Lin, Cheng‐Chung; Chou, Li‐Wei; Chueh, Yu‐Lun

doi:10.1063/1.1886274

Cited by 185 publications

(95 citation statements)

References 42 publications

(62 reference statements)

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“…With increasing the oxygen flow rate up to 1.2 sccm, the dominant phase in the film transfers into SiO 2 -like. Thus, the Si-related NOV defects would become the dominant luminescent centers in the film, contributing to the enhanced blue light emission [31]. This is consistent with the fact that the blue emission intensity is directly proportional to the SiAOASi bond density.…”

Section: Resultssupporting

confidence: 51%

“…In the C-rich SiC x O y films, it is considered that the oxygen may be doped as defect-related luminescent centers such as neutral oxygen vacancy (NOV) due to deviation from perfect stoichiometry [17]. The formation of NOV defects would further give rise to the blue emission via the electronic transition between the singlet ground state and the elevated state (triplet) of the Si-related NOV defect [31,32]. This well explained the weak blue band observed in S1 and S2 as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

Lin

Guo

Song

et al. 2015

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 51%

Section: Resultsmentioning

confidence: 99%

Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

Lin

Guo

Song

et al. 2015

Journal of Alloys and Compounds

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“…Then, we can assume that there is no nitridation effect or any radiative defect formation in the Si-NC/SiO 2 interface for embedded films. This is confirmed by the absence of emission bands related to Si-O defects [23]. It is possible that thermal annealing in nitrogen passivates the non-radiative centers around the Si-NCs, showing only the PL emission from Si-NCs [4,19].…”

Section: Discussionsupporting

confidence: 53%

“…This shift has been associated with the formation of amorphous silicon oxide (a-SiO2) due to spinoidal decomposition [30]. Therefore, the structural units of the SOG, which can be described by the different tetrahedral units SiO4-xSix with n = 0−4, gradually transform into well-defined SiO4 and Si-Si4 tetrahedral structures [23,24]. This transformation, only observed in the coated films, agrees with the TEM observation of the SOG flowing into the Si-NCs layer after thermal annealing.…”

Section: Grazing Incidence X-ray Diffractionmentioning

confidence: 99%

“…In the first method, temperatures of around 1100 • C are needed to promote the nucleation and activation of radiative Si nanopoints, crystalline or not [3,4,19,20]. Examples of these materials are the silicon rich oxides obtained by chemical vapor deposition (CVD), Ionic implantation of Si in a dielectric matrix, and thermally treated chemical solutions [4,[21][22][23]. These kind of silicon rich oxides show photoluminescence mainly in a range from 650 to 950 nm.…”

Section: Introductionmentioning

confidence: 99%

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Luminescent Properties of Silicon Nanocrystals:Spin on Glass Hybrid Materials

et al. 2017

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Abstract:The photoluminescence characteristics of films consisting of Si nanocrystals either coated with or embedded into Spin on Glass (SOG) were studied. Si nanocrystals showing red or blue luminescence when suspended in alcohol solution were obtained from porous silicon films. These were then either deposited in Si substrates and coated with SOG, or mixed in an SOG solution that was later spun on Si substrates. Both types of films were thermally annealed at 1100 • C for three hours in N 2 atmosphere. Transmission electron microscopy measurements showed a mean diameter of 2.5 nm for the Si nanocrystals, as well as the presence of polycrystalline Si nanoagglomerates. These results were confirmed by X-ray diffraction studies, which revealed the (111), (220) and (311) Bragg peaks in Si nanocrystals. Fourier transform infrared spectroscopy studies showed that the coated films present higher chemical reactivity, promoting the formation of non-stoichiometric SiO 2 , while the embedded films behave as a stoichiometric SiO 2 after the thermal annealing. The PL (photoluminescence) characterization showed that both embedded and coated films present emission dominated by the Quantum Confinement Effect before undergoing any thermal treatment. After annealing, the spectra were found to be modified only in the case of the coated films, due to the formation of defects in the nanocrystals/SiO 2 interface.

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Photoluminescence shift in frustules of two pennate diatoms and nanostructural changes to their pores

et al. 2014

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The diatom silicified cell wall (frustule) contains pore arrays at the micro- to nanometer scale that display efficient luminescence within the visible spectrum. Morphometric analysis of the size and arrangement of pores was conducted to observe whether any correlation exists with the photoluminescence (PL) of two diatom species of different ages. UV-excited PL displays four clearly defined peaks within the blue-region spectrum, on top of the broad PL characteristic of synthetic porous silicon dioxide, recorded for reference and where discrete lines are absent. A set of shifted emission lines was observed when diatom cultures reached adulthood. These discrete line shifts correlate with structural changes observed in adult frustules: reduction in pore diameter; appearance of pores within pores, 10 nm in size; an increase in the gap distance between stria; and the deposition of several girdle bands with a concomitant increase in the diatom waist length, as well as the appearance of pores on such bands. Destruction of the pores results in the disappearance of all discrete emission lines. The PL shifts are correlated with a substantial increment of Si-OH groups adsorbed on the frustule surface, as revealed by Fourier transform infrared spectroscopy.

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Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2

Abstract: Articles you may be interested in N 2 O-grown oxides/ 4 H-SiC (0001), (03 3 ¯ 8) , and (11 2 ¯ 0) interface properties characterized by using ptype gate-controlled diodes Appl.

Cited by 185 publications

References 42 publications

Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

Influence of the oxygen content in obtaining tunable and strong photoluminescence from low-temperature grown silicon oxycarbide films

Luminescent Properties of Silicon Nanocrystals:Spin on Glass Hybrid Materials

Photoluminescence shift in frustules of two pennate diatoms and nanostructural changes to their pores

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