No abstract

No abstract

No abstract

No abstract

Reactivity of Cu with poly(tetrafluoroethylene) and poly(vinyl chloride): Effect of pre-and post-metallization modification on the metal/polymer interface J.

No abstract

Interesting results have been reported concerning the magnetic properties of the Mn5Ge3 compound, opening the road to possibly create spin injectors in Ge. However, a process compatible with the Complementary Metal Oxide Semiconductor technology, allowing to produce a Mn5Ge3 layer on the active regions of Ge-based transistors has not been well established yet. Here, we report on the solid state reaction between a 50 nm-thick Mn film and amorphous Ge, aiming to investigate a similar process than the one (Salicide) used for contact production in the standard Si technology. In situ X-ray diffraction combined with ex situ structural and magnetic characterizations were used to identify and study phase formation during the Mn/Ge reaction.

Using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), scanning tunnelling microscopy (STM) and high resolution photo-electron spectroscopy (HR-PES) techniques we have studied the annealing effect of one silicon monolayer deposited at room temperature onto a Ni (111) substrate.The variations of the Si surface concentration, recorded by AES at 300°C and 400°C, show at the beginning a rapid Si decreasing followed by a slowing down up to a plateau equivalent to about 1/3 silicon monolayer.STM images and LEED patterns, both recorded at room temperature just after annealing, reveal the formation of an ordered hexagonal superstructure ( 3 3) 30 R ×°-type. From these observations and from a quantitative analysis of HR-PES data, recorded before and after annealing, we propose that the ( 3 3) 30 R ×°superstructure corresponds to a two dimensional (2D) Ni 2 Si surface silicide.