2005
DOI: 10.1016/j.susc.2004.10.052
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Self-aligned silicon quantum wires on Ag(110)

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Cited by 148 publications
(150 citation statements)
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“…On Ag(001) we observed super-structures that we eventually came to characterize as deformed hexagonal structures 8 . Subsequently, extensive investigations of Si sub-monolayer growth on Ag(110) revealed self-assembled nanoribbons (NRs) 1.6 nm in width and several hundred nm in length [9][10][11] . These NRs show strong resistance to oxidation on their edges 12 , an intriguing chemical property given the strong propensity of silicon surfaces to oxidize.…”
mentioning
confidence: 99%
“…On Ag(001) we observed super-structures that we eventually came to characterize as deformed hexagonal structures 8 . Subsequently, extensive investigations of Si sub-monolayer growth on Ag(110) revealed self-assembled nanoribbons (NRs) 1.6 nm in width and several hundred nm in length [9][10][11] . These NRs show strong resistance to oxidation on their edges 12 , an intriguing chemical property given the strong propensity of silicon surfaces to oxidize.…”
mentioning
confidence: 99%
“…13,14 Indeed, the reversal of the deposition sequence semiconductor/metal instead of metal/semiconductor can have a significant influence on the interface, 15 as in the case of Si and Ge deposited on silver substrates where new structures have been observed such as Si and Ge tetramers [16][17][18][19][22][23][24]36 or silicene nano-ribbons and sheets. [25][26][27][28][29][30][31][32][33][34][35][36] In this Letter, we report our results on the formation of a 2D Si-Au surface alloy obtained by growth, under UHV conditions, of a sub-monolayer (ML) coverage of silicon on a bare Au(110) substrate kept at a temperature above the eutectic temperature (between 360-500 C). A 2D surface alloy is formed and is stable at RT and presents two mirrorsymmetric domains with respect to the high symmetry axes of the substrate.…”
mentioning
confidence: 99%
“…Even though bulk form of silicon still maintains its importance in device applications, its 2D form, which is coined as silicene, has recently started to attract attention of the scientists in material science after the realization of its synthesis in Marseille (France) [6,7]. The same group has successfully shown that epitaxial growth of silicene structures are possible by depositing silicon on Ag [100] and Ag [110] surfaces and in addition to this, they have also performed density functional theory (DFT) calculations over silicene nanoribbons (SiNRs) [7][8][9].…”
mentioning
confidence: 99%
“…Even though bulk form of silicon still maintains its importance in device applications, its 2D form, which is coined as silicene, has recently started to attract attention of the scientists in material science after the realization of its synthesis in Marseille (France) [6,7]. The same group has successfully shown that epitaxial growth of silicene structures are possible by depositing silicon on Ag [100] and Ag [110] surfaces and in addition to this, they have also performed density functional theory (DFT) calculations over silicene nanoribbons (SiNRs) [7][8][9]. Considering the fact that carbon materials are not compatible with the present microelectromechanical systems (MEMS) technology, the possibility of replacing conventional MEMS technology based on bulk silicon with silicon-based nanotechnology will draw the attention of the electronics industry toward SiNRs since such a material is promising for prolonging the validity of Moore's Law [7].…”
mentioning
confidence: 99%
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