Epitaxial growth of a silicene sheet

Lalmi, B.; Oughaddou, Hamid; Enriquez, Hanna; Kara, Abdelkader; Vizzini, Sébastien; Ealet, B.; Aufray, B.

doi:10.1063/1.3524215

Cited by 1,348 publications

(1,062 citation statements)

References 17 publications

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“…4(b) shows a honeycomb structure. However, different from the reported 1×1 structure of silicene [14], the lattice period of the honeycomb structure we observed is about 0.64 nm, which is corresponding to a √ 3 × √ 3 honeycomb superstructure with respect to the 1×1 silicene lattice. This superstructure can be explained by a symmetric-buckled silicene model [20] which is shown in Fig.…”

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confidence: 99%

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

et al. 2012

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In the search for evidence of silicene, a two-dimensional honeycomb lattice of silicon, it is important to obtain a complete picture for the evolution of Si structures on Ag(111), which is believed to be the most suitable substrate for growth of silicene so far. In this work we report the finding and evolution of several monolayer superstructures of silicon on Ag(111) depending on the coverage and temperature. Combined with first-principles calculations, the detailed structures of these phases have been illuminated. These structure were found to share common building blocks of silicon rings, and they evolve from a fragment of silicene to a complete monolayer silicene and multilayer silicene. Our results elucidate how silicene formes on Ag(111) surface and provide methods to synthesize high-quality and large-scale silicene.

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confidence: 99%

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

et al. 2012

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“…The metastable lattice that we find is the same as the "low-buckled" structure found by Cahangirov et al 3 The experimental results for the lattice parameter depend on the choice of substrate on which the silicene is grown. 5,6 The extent to which theoretical results obtained for freestanding silicene are applicable to the silicene samples that have been produced to date is therefore unclear.…”

Section: A Comparison With Theoretical and Experimental Results In Tmentioning

confidence: 99%

“…1,2 A close relative of graphene, a 2D honeycomb lattice of Si atoms called silicene, 3 does not occur in nature, but nanoribbons of silicene have been synthesized on metal surfaces. [4][5][6] Due to the similarity of the lattice structures, the band structure of silicene resembles that of graphene, featuring Dirac-type electron dispersion in the vicinity of the corners of its hexagonal Brillouin zone (BZ). 7 Moreover, silicene has been shown theoretically to be metastable as a freestanding 2D crystal, 3 implying that it is possible to transfer silicene onto an insulating substrate and gate it electrically.…”

Section: Introductionmentioning

confidence: 99%

Electrically tunable band gap in silicene

2012

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We report calculations of the electronic structure of silicene and the stability of its weakly buckled honeycomb lattice in an external electric field oriented perpendicular to the monolayer of Si atoms. The electric field produces a tunable band gap in the Dirac-type electronic spectrum, the gap being suppressed by a factor of about eight by the high polarizability of the system. At low electric fields, the interplay between this tunable band gap, which is specific to electrons on a honeycomb lattice, and the Kane-Mele spin-orbit coupling induces a transition from a topological to a band insulator, whereas at much higher electric fields silicene becomes a semimetal.

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“…Although these systems are structurally similar to silicene and germanene [40][41][42][43][44][45][46], the electronic structures are significantly different, leading to a tunable band gap opening, instead of forming gapless systems.…”

Section: Electronic Structure and Topological Properties Of The Xbi Amentioning

confidence: 99%

“…However, they are comparable to the cohesive energy of silicene (3.98 eV). As in the case of silicene, a possible way of assisting the synthesis of stable XBi sheets would be its growth upon an appropriate substrate [43][44].…”

Section: Structure and Dynamic Stability Of The Xbi And Xbi3 Sheetsmentioning

confidence: 99%

Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi₃(X = B, Al, Ga, and In) sheets

Freitas

Mota

Rivelino

et al. 2015

J. Phys.: Condens. Matter

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The band structure and stability of XBi and XBi3 (X = B, Al, Ga, and In) single sheets are predicted using first-principles calculations. It is demonstrated that the band gap values of these new classes of two-dimensional (2D) materials depend on both the spin-orbit coupling (SOC) and type of group-III elements in these hetero-sheets. Thus, topological properties can be achieved, allowing for viable applications based on coherent spin transport at room temperature. The spin-orbit effects are proved to be essential to explain the tunability by group-III atoms. A clear effect of including SOC in the calculations is lifting the spin degeneracy of the bands at the  of the Brillouin zone. The nature of the band gaps, direct or indirect, is also tuned by SOC, and by the appropriate X element involved. It is observed that, in the case of XBi single sheets, band inversions naturally occur for GaBi and InBi, which exhibit band gap values around 172 meV. This indicates that these 2D materials are potential candidates for topological insulators. On the contrary, a similar type of band inversion, as obtained for the XBi, was not observed in the XBi3 band structure. In general, the calculations, taking into account SOC, reveal that some of these buckled sheets exhibit sizable gaps, making them suitable for applications in room-temperature spintronic devices.

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Epitaxial growth of a silicene sheet

Cited by 1,348 publications

References 17 publications

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

Electrically tunable band gap in silicene

Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi₃(X = B, Al, Ga, and In) sheets

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Epitaxial growth of a silicene sheet

Cited by 1,348 publications

References 17 publications

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)

Electrically tunable band gap in silicene

Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3(X = B, Al, Ga, and In) sheets

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Product

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Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi₃(X = B, Al, Ga, and In) sheets