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Ultrathin Ni silicides were formed on silicon-oninsulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The Ni layer thickness crucially determines the silicide phase formation: With a 3-nm Ni layer, high-quality epitaxial NiSi 2 layers were grown at temperatures > 450 • C, while NiSi was formed with a 5-nm-thick Ni layer. A very thin Pt interlayer, to incorporate Pt into NiSi, improves the thermal stability and the interface roughness and lowers the contact resistivity. The contact resistivity of epitaxial NiSi 2 is about one order of magnitude lower than that of a NiSi layer on both As-and B-doped SOI and SSOI.

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