Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs)
are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by dopant segregation at low temperatures improve the band-to-band tunneling, resulting in higher oncurrents
of n- and p-TFETs of >10 μA/μm at VDS = 0.5 V.
The subthreshold slope for n-channel TFETs reaches a minimum value of 30 mV/dec, and is <60 mV/dec over one order of magnitude of drain current. The first sSi NW complementary
TFET inverters show sharp transitions and fairly high static gain even at very low VDD = 0.2 V. The first transient response analysis of the inverters shows clear output voltage overshoots and a fall time of 2 ns at VDD = 1.0 V
The relative dissociative recombination rate coefficients for specific vibrational states of HD ϩ have been measured. The method is based on using merged electron and molecular ion beams in a heavy-ion storage ring together with molecular fragment imaging techniques which allow us to probe the vibrational-state population of the stored beam as a function of time as well as the final state of the dissociation. The initial vibrational distribution of the stored ion beam ͑from a Penning ion source͒ is found to be in good agreement with a Franck-Condon model of electron impact ionization, apart from slightly larger experimental populations found for low vibrational states; its time evolution in the storage ring reflects the predicted vibrational level lifetimes. Dissociative recombination measurements were performed with the electron and ion beams at matched velocities ͑corresponding to average collision energies of about 10 meV͒, and at several well-defined collision energies in the range of 3-11 eV. The obtained vibrational-state specific recombination rate coefficients are compared with theoretical calculations and show that, although an overall agreement exists between experiment and theory, large discrepancies occur for certain vibrational states at low electron energy.
Experimental data are presented from three different heavy-ion storage rings ͑ASTRID in Aarhus, CRY-RING in Stockholm, and TSR in Heidelberg͒ to assess the reliability of this experimental tool for the extraction of absolute rate coefficients and cross sections for dissociative recombination ͑DR͒. The DR reaction between HD ϩ and electrons has been studied between 0 and 30 eV on a dense energy grid. HD ϩ displays two characteristic local maxima in the DR rate around 9 and 16 eV. These maxima influence the data analysis at smaller collision energies. We conclude that resonant structures in the DR cross sections are reproduced among the experiments within the collision energy resolution. The absolute cross sections agree within the systematic experimental errors of 20% related to the measurement of the ion currents. Absolute thermal rate coefficients for HD ϩ ions are given for an electron temperature range of 50-300 K. Results for the DR cross section and the thermal rate coefficients are compared to recent theoretical calculations including rotational effects, finding satisfactory agreement.
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