1 Introduction Global energy demand is predicted to exceed 30 TW by 2050, about double the present value [1]. This predicament, known as the TeraWatt challenge, and concern over anthropogenic climate change, resource availability ("peak energy") and energy security have all increased the interest in renewable energy (hydroelectric, wind, solar, geothermal and biomass) [2]. One of the most promising renewable energy technologies is solar photovoltaics (PV) which convert sunlight directly into electrical energy. Although the resource potential of PV is enormous, it currently constitutes a small fraction (<1%) of global energy supply [2]. One of the main factors limiting the widespread adoption of PV is its low energy density, low efficiency, and relatively high cost in comparison to other energy technologies. This means that current PV technology can only compete in areas of high insolation or by government incentives such as feed-in tariff programs.One of the most relevant metrics for PV devices is the power conversion efficiency (PCE); that is, the efficiency with which sunlight can be converted to electrical power. A significant effort in PV research today aims to improve PCE while simultaneously reducing (or, at least, not significantly impacting) production cost. The vast majority of

The effect of ammonium polysulfide solution, (NH₄)₂S(x), on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 10¹² to 10¹⁰ cm⁻², corresponding to a change in surface recombination velocity from 10⁶ to 10⁴ cm s⁻¹. The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable.

Abstract. Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10 − 200 K. The mobility increases with temperature below ∼ 30 − 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data.

a b s t r a c tInAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GSMBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al x In 1 À x As or Al x In 1 À x P shells with nominal Al composition fraction of x ¼ 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterisation by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle, and surfactant effects. The InAs-AlInP coreshell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of dislocations.

InAs/InP axial nanowire heterostructures were grown by the Au-assisted vapour–liquid–solid method in a gas source molecular beam epitaxy system. The nanowire crystal structure and morphology were investigated by transmission electron microscopy for various growth conditions (temperature, growth rate, V/III flux ratio). Growth mechanisms were inferred from the InAs and InP segment lengths as a function of the nanowire diameter. Short InAs segment lengths were found to grow by depletion of In from the Au particle as well as by direct impingement, while longer segments of InAs and InP grew by diffusive transport of adatoms from the nanowire sidewalls. The present study offers a way to control the lengths of InAs quantum dots embedded in InP barriers.

The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of the energy level structure, and consequently the conductance, for more general cases ranging from a flat potential to strong surface band bending. The transverse states are not confined to a shell, but are distributed across the nanowire. It is found that, in general, the subband energy spectrum is aperiodic as a function of both gate voltage and magnetic field. In principle, this allows for precise identification of the occupied subbands from the magnetoconductance patterns of quasi-ballistic devices. The aperiodicity becomes more apparent as the potential flattens. A quantitative method is introduced for matching features in the conductance data to the subband structure resulting from a particular radial potential, where a functional form for the potential is used that depends on two free parameters. Finally, a short-channel InAs nanowire FET device is measured at low temperature in search of conductance features that reveal the subband structure. Features are identified and shown to be consistent with three specific subbands. The experiment is analyzed in the context of the weak localization regime, however, we find that the subband effects predicted for ballistic transport should remain visible when back scattering dominates over interband scattering, as is expected for this device.

We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trapping. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level.

The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate.PACS numbers: