Trapped charge dynamics in InAs nanowires

Holloway, Gregory W.; Song, Yipu; Haapamaki, Chris M.; LaPierre, Ray; Baugh, Jonathan

doi:10.1063/1.4773820

Cited by 19 publications

(18 citation statements)

References 27 publications

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“…This spacing is directly proportional to the charging energy which we conclude to be constant upon illumination. From Nakazato's model, we conclude that the hysteresis area change is then directly due to a modification of the time constant τ, pointing out to a modification in the dynamics of charge transfer through the MTJ, which is consistent with the work of Holloway et al Upon light exposure, the molecules involved in the MTJ turn excited which modifies the potential profile of the multiple barriers involved in the charge transfer to the nanotube. Indeed, Gruneis et al have observed sharp features in the case of a trap being very well coupled to a nanotube .…”

supporting

confidence: 87%

Light Control of Charge Transfer and Excitonic Transitions in a Carbon Nanotube/Porphyrin Hybrid

et al. 2017

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Carbon nanotube-chromophore hybrids are promising building blocks in order to obtain a controlled electro-optical transduction effect at the single nano-object level. In this work, a strong spectral selectivity of the electronic and the phononic response of a chromophore-coated single nanotube transistor is observed for which standard photogating cannot account. This paper investigates how light irradiation strongly modifies the coupling between molecules and nanotube within the hybrid by means of combined Raman diffusion and electron transport measurements. Moreover, a nonconventional Raman enhancement effect is observed when light irradiation is on the absorption range of the grafted molecule. Finally, this paper shows how the dynamics of single electron tunneling in the device at low temperature is strongly modified by molecular photoexcitation. Both effects will be discussed in terms of photoinduced excitons coupled to electronic levels.

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confidence: 87%

Light Control of Charge Transfer and Excitonic Transitions in a Carbon Nanotube/Porphyrin Hybrid

et al. 2017

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“…While prototypical devices have demonstrated the fundamentals of this implementation [1,2,[11][12][13], further engineering is desirable to improve the reproducibility (less wire to wire variation), the tunability and stability of the electrostatic potential. Fluctuations in the electrostatic potential are largely due to charge traps located at the nanowire surface or in the native oxide layer [14,15]. Chemical passivation, in which a layer of atoms or molecules is covalently bonded to the semiconductor surface, is one method to prevent the oxide from forming and to passivate surface states.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Holloway¹,

Haapamaki²,

Kuyanov³

et al. 2016

Semicond. Sci. Technol.

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The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate.PACS numbers:

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“…Charge trapping by oxide at gate interfaces is a well-known contributor to gate hysteresis in nanowire transistors. [31][32][33] The data in Fig. 3b indicates low hysteresis under dc operation; this performance is retained under ac conditions also.…”

Section: Inspired By Mori Andmentioning

confidence: 83%

p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

et al. 2018

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Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical subthreshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio ∼10, on-resistance ∼700 kΩ, contact resistance ∼30 kΩ, peak transconductance 1.2 μS/μm, and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates while leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.

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Trapped charge dynamics in InAs nanowires

Cited by 19 publications

References 27 publications

Light Control of Charge Transfer and Excitonic Transitions in a Carbon Nanotube/Porphyrin Hybrid

Light Control of Charge Transfer and Excitonic Transitions in a Carbon Nanotube/Porphyrin Hybrid

Electrical characterization of chemical and dielectric passivation of InAs nanowires

p-GaAs Nanowire Metal–Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

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