Magnetoconductance signatures of subband structure in semiconductor nanowires

Holloway, Gregory W.; Shiri, Daryoush; Haapamaki, Chris M.; Willick, Kyle; Watson, Grant; LaPierre, Ray; Baugh, Jonathan

doi:10.1103/physrevb.91.045422

Cited by 17 publications

(26 citation statements)

References 29 publications

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“…In InAs, Fermi level pinning leads to conduction close to the nanowire surface 31,32 which strongly influences the sub-band dispersion in magnetic field. 33,34 InSb has no surface accumulation 35 and the electron wave-function will be more strongly confined in the center of the nanowire. For cylindrical nanowires individual sub-band wave functions are given by Bessel functions with different orbital angular momentum along the wire (Fig 4a), and numerical simulations of wires with a hexagonal cross-section show qualitatively similar results.…”

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confidence: 99%

Conductance Quantization at Zero Magnetic Field in InSb Nanowires

et al. 2016

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Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowiremetal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1 T.

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confidence: 99%

Conductance Quantization at Zero Magnetic Field in InSb Nanowires

et al. 2016

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“…The eigenenergies E can be expressed in dimensionless form as

E = E_{m}^{σ} + k^{2}

, where

E_{m}^{σ}

are obtained by solving the radial Equation and

k^{2}

are the energies due to electrons moving freely along z direction. In Figure , the total conductance G is more complicated than that of a typical nanowire reported before . It exhibits mixed characters of

G^{↑}

and

G^{↓}

.…”

Section: Resultsmentioning

confidence: 79%

Coaxial Quantum Well Wires in Magnetic/Nonmagnetic Heterostructures

Sangtawee

Srikom

Amthong

2018

Physica Status Solidi (b)

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We propose a coaxial cylindrical quantum well wire which is composed of layers of a dilute magnetic semiconductor (DMS) and a nonmagnetic semiconductor (NMS). Using effective mass approximation, we present a numerical calculation of the eigenenergies and eigenstates of electrons in the heterostructure. The variation of the spin‐dependent energy levels is influenced by the giant Zeeman splitting and potential energies due to a vector potential for sufficiently low and high magnetic fields, respectively. It is found that crossing and anticrossing behaviors of energy levels can be controlled by the thickness of a NMS layer. The ballistic transport of the structure is also investigated. The ranges of the Fermi energy for obtaining full spin polarization are suggested in this work.

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“…One of the most recent studies of MC will be in semiconductor nanowires [5]. Particularly, the porous silicon (PS) layer is as an inhomogeneous system and it is a complex material.…”

Section: Introductionmentioning

confidence: 99%