1 Introduction Global energy demand is predicted to exceed 30 TW by 2050, about double the present value [1]. This predicament, known as the TeraWatt challenge, and concern over anthropogenic climate change, resource availability ("peak energy") and energy security have all increased the interest in renewable energy (hydroelectric, wind, solar, geothermal and biomass) [2]. One of the most promising renewable energy technologies is solar photovoltaics (PV) which convert sunlight directly into electrical energy. Although the resource potential of PV is enormous, it currently constitutes a small fraction (<1%) of global energy supply [2]. One of the main factors limiting the widespread adoption of PV is its low energy density, low efficiency, and relatively high cost in comparison to other energy technologies. This means that current PV technology can only compete in areas of high insolation or by government incentives such as feed-in tariff programs.One of the most relevant metrics for PV devices is the power conversion efficiency (PCE); that is, the efficiency with which sunlight can be converted to electrical power. A significant effort in PV research today aims to improve PCE while simultaneously reducing (or, at least, not significantly impacting) production cost. The vast majority of

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We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the mask, allowing us to vary the diameter from 30 nm to 400 nm with a pitch from 250 nm to 1100 nm and length up to 2.2 μm. A diameter to pitch ratio of ∼68% was achieved. We also measured the reflectance from the nanowire arrays and show experimentally diameter-dependent strong absorption peaks resulting from resonant optical mode excitations within these nanowires. The reflectance curves match very well with simulations. The work done here paves the way towards achieving high efficiency solar cells and tunable photodetectors using III–V nanowires.

Poisson's equation is solved to provide a comprehensive model of nanowire (NW) surface depletion as a function of interface state density, NW radius, and doping density. This model improves upon established theory by giving distinct solutions to the cases of full and partial NW depletion while implementing the charge neutrality level and accurate Fermi-Dirac statistics. To explain the underlying physics, key parameters were plotted as a function of both interface state density and NW radius, showing interesting features such as the lowering of the Fermi level in fully depleted NWs and marked increase in surface depletion width and built-in surface potential (relative to a planar film equivalent) in partially depleted NWs. Finally, examination of NW conductivity found that for NWs of radius acrit, the minimum NW radius before which the entire NW is depleted, conductivity can be reduced by up to 95% relative to bulk. Additionally, majority carrier inversion is predicted to occur in thin NWs.

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.