Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.

This study aimed to identify the trends in the incidence of thymic cancer, i.e., thymoma, thymic carcinoma, and thymic neuroendocrine tumor, in the United States. Data from the United States Cancer Statistics (USCS) database (2001–2015) and those from the Surveillance, Epidemiology, and End Results (SEER) database (SEER 9 [1973–2015], SEER 13 [1992–2015], and SEER 18 [2000–2015]) were used in this study. All incidences were per 100,000 population at risk. The trends in incidence were described as annual percent change (APC) using the Joinpoint regression program. Data from the USCS (2001–2015) database showed an increase in thymic cancer diagnosis with an APC of 4.89% from 2001 to 2006, which is mainly attributed to the significant increase in the incidence of thymoma and thymic carcinoma particularly in women. The incidence of thymic cancer did not increase from 2006 to 2015, which may be attributed to the increase in the diagnosis of thymic carcinoma from 2004 to 2015, with a concomitant decrease in thymoma from 2008 to 2015. Before declining, the age-specific incidence of thymic cancer peaked at ages 70–74 years, with a peak incidence at 1.06 per 100,000 population, and decreased in older age groups. The incidence of thymic cancer was higher in men than in women. Asian/Pacific Islanders had the highest incidence of thymoma, followed by black and then white people. The incidence of thymic carcinoma increased from 2004 to 2015, with a concomitant decrease in thymoma from 2008 to 2015. Asian/Pacific Islanders had the highest incidence of thymoma than other races.

The presence of two-dimensional (2D) layerstacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS 3 /Fe 3 GeTe 2 when the temperature is below the Neel temperature of MnPS 3 . Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS 3 /Fe 3 GeTe 2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe 3 GeTe 2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.

By using cavity ring-down spectroscopy technique, we have observed the channel leading to Br(2) molecular elimination following photodissociation of bromoform at 248 nm. A tunable laser beam, which is crossed perpendicular to the photolysis laser beam in a ring-down cell, is used to probe the Br(2) fragment in the B(3)Pi(ou)(+)-X(1)Sigma(g)(+) transition using the range 515-524 nm. The ring-down time lasts 500 ns, so the rotational population of the Br(2) fragment may not be nascent nature, but its vibrational population should be. The vibrational population ratio of Br(2)(upsilon=1)/Br(2)(upsilon=0)=0.8+/-0.2 implies that the fragmented Br(2) is vibrationally hot. The quantum yield of the molecular elimination reaction is 0.23+/-0.05, consistent with the values of 0.26 and 0.16 reported in 234 and 267 nm photolysis of bromoform, respectively, using velocity ion imaging. A plausible photodissociation pathway is proposed, based upon this work and ab initio calculations. The A(1)A(2), B(1)E, and C(1)A(1) singlet states of bromoform are probably excited at 248 nm. These excited states may couple to the high vibrational levels of the ground state X(1)A(1) via internal conversion. This vibrationally excited bromoform readily surpasses a reaction barrier 389.6 kJ/mol prior to decomposition. The transition state structure tends to correlate with vibrationally hot Br(2). Dissociation after internal conversion of the excited states to vibrationally excited ground state should result in a large fraction of the available energy to be partitioned in vibrational states of the fragments. The observed vibrationally hot Br(2) fragment seems to favor the dissociation pathway from high vibrational levels of the ground state. Nevertheless, the other reaction channel leading to a direct impulsive dissociation from the excited states cannot be excluded.

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Probing the effects of thin-film thickness on transition metal dichalcogenides offer novel insights into their electronic properties and tunability, which leads to a new avenue of research and applications. A comprehensive first-principles study on thickness-dependent structural stabilities and electronic properties of ZrX2 (X = S, Se, or Te) thin films from 1 layer (L) to 6L and bulk was performed. The calculated formation energies show that ZrX2 adopts the 1T phase as the most stable structure. Furthermore, 1T-ZrS2 and ZrSe2 thin films and bulk are indirect semiconductors and their band gaps decrease as the number of layers is increased up to 6L, while 1T-ZrTe2 thin films and bulk are semimetallic. Interestingly, we demonstrate that the surface band structure of bulk and monolayer ZrTe2 under generalized gradient approximation + U and HSE06 methods is in excellent agreement with the angle-resolved photoelectron spectroscopy measurement. Finally, we discover the existence of van Hove singularities in strained 2L and unstrained 3L 1T-ZrS2 thin films, implying the existence of superconductivity in these thin films. These results showcase the tunable electronic properties of ZrX2 thin films because of thickness dependence and strain.

We examine room temperature band-to-band tunneling in 2D InAs/3D GaSb heterostructures. Specifically, multi-subband, gate-controlled negative differential resistance is observed in InAs/ AlSb/GaSb junctions. Due to spatial confinement in the 10 nm-thick InAs layer, tunneling contributions from two distinct subbands are observed as sharp steps in the current-voltage characteristics. It is shown that the relative position of the steps can be controlled via external gate bias. Additionally, the extracted separation in the subband energy agrees well with the calculated values. This is the first demonstration of a gate controlled tunneling diode with multiple subband contributions. V C 2013 AIP Publishing LLC. [http://dx.

Background Iron deficiency is associated with decreased cellular immunity, which may predispose patients with iron deficiency anemia (IDA) to increased risk of developing tuberculosis (TB). This study investigated the relationship between newly diagnosed IDA and TB infection in Taiwan. Methods The study included data on 21,946 patients with incident IDA and 87,555 non-IDA controls from a national database covering the period 2000–2012. IDA and non-IDA subjects were matched 1:4 on age, gender, and index year. The follow-up period was defined as the time from the initial IDA diagnosis to the date of developing TB or 31 December 2013. Cox proportional hazards models were used to estimate hazard ratios and 95% confidence intervals, with the control group as the reference. Results The adjusted hazard ratio of TB for the IDA group was 1.99 (95% confidence interval, 1.77–2.25) compared with the control group. The subgroup analysis showed that for both genders, all age groups, and patients with diabetes mellitus, hyperlipidemia, hypertension, cancer, chronic obstructive pulmonary disease, and hepatitis B virus infection, the IDA group had significantly higher TB incidence. The association was significantly stronger within the 5 years after new IDA diagnosis for both genders and all age groups. Conclusions Higher TB incidence was discovered in the IDA group, especially for patients with comorbidities.