Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure

Hu, Guojing; Zhu, Yuanmin; Xiang, Junxiang; Yang, Tzu‐Yi; Huang, Meng; Wang, Zhe; Wang, Zhi; Liu, Ping; Zhang, Ying; Feng, Chao; Hou, Dazhi; Zhu, Wenguang; Gu, Meng; Hsu, Ching Yi; Chuang, Feng‐Chuan; Lu, Yalin; Xiang, Bin; Chueh, Yu‐Lun

doi:10.1021/acsnano.0c05252

Cited by 61 publications

(54 citation statements)

References 39 publications

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“…Among them, AFM/FM heterostructures exhibiting exchange bias are particularly important for the fabrication of spin-valve devices such as magnetic read heads 10 and magnetic memory cells. 11 Recently, more novel magnetic properties based on AFM/FM heterostructures have been observed including the antisymmetric magnetoresistance in MnPS 3 / Fe 3 GeTe 2 , 12 and the magnetic topological states in SrRuO 3 / BiFeO 3 heterostructures. 13 Bimagnetic heterostructures thereby provide an ideal platform for exploring new physical properties and relevant spintronic device applications.…”

Section: Introductionmentioning

confidence: 99%

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods

et al. 2021

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Magnetic heterostructures offer great promise in spintronic devices due to their unique magnetic properties, such as exchange bias effect, topological superconductivity, and magneto-resistance. Although various magnetic heterostructures including core/shell, multilayer, and van der Waals systems have been fabricated recently, the construction of perfect heterointerfaces usually rely on complicated and high-cost fabrication methods such as molecular-beam epitaxy; surprisingly, few one-dimensional (1D) bimagnetic heterojunctions, which provide multidegrees of freedom to modulate magnetic properties via magnetic anisotropy and interface coupling, have been fabricated to date. Here we report a one-pot solution-based method for the synthesis of ferromagnetic/antiferromagnetic/ferromagnetic heterojunction nanorods with excellent heterointerfaces in the case of Cr2Te3/MnTe/Cr2Te3. The precise control of homogeneous nucleation of MnTe and heterogeneous nucleation of Cr2Te3 is a key factor in synthesizing this heterostructure. The resulting 1D bimagnetic heterojunction nanorods exhibit high coercivity of 5.8 kOe and exchange bias of 892.5 Oe achieved by the magnetic MnTe/Cr2Te3 interface coupling.

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Section: Introductionmentioning

confidence: 99%

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods

et al. 2021

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“…[21][22][23][24][25] However, it remains under explored in vdW magnets. Recently, exchange bias was reported in mechanically exfoliated CrCl 3 /Fe 3 GeTe 2 (FGT) heterostructrues (≈50 mT) at 2.5 K, [26] MnPS 3 /FGT samples, [27,28] gatedtuned FGT interlayers, [29] and naturally oxidized FGT. [30] Taking advantages of atomically thin 2D magnets, the spintronic devices based on exchange bias can be expanded to the atomic limit.…”

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confidence: 99%

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Wang

Pan

et al. 2022

Advanced Materials

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configurations, which can be easily stacked layer-by-layer with varied twist angles to explore new physics. Interesting phenomena, like magnetic skyrmions features, [7,8] magnetic proximity effect, [9][10][11] superconductivity, [12][13][14][15][16] Mott insulators, [17,18] and quantum anomalous Hall effect, [19,20] have been extensively studied in vdW heterostructures.The exchange bias is reflected as a shift of the hysteresis loop of a ferromagnetic material along the magnetic field axis, which has been applied to spintronic devices for data storage. Exchange bias in antiferromagnet/ferromagnet, ferrimagnet/ferromagnet, and antiferromagnet/ferrimagnet heterostructures has been extensively studied for large exchange-bias fields. [21][22][23][24][25] However, it remains under explored in vdW magnets. Recently, exchange bias was reported in mechanically exfoliated CrCl 3 /Fe 3 GeTe 2 (FGT) heterostructrues (≈50 mT) at 2.5 K, [26] MnPS 3 /FGT samples, [27,28] gatedtuned FGT interlayers, [29] and naturally oxidized FGT. [30] Taking advantages of atomically thin 2D magnets, the spintronic devices based on exchange bias can be expanded to the atomic limit. In addition, the weak interlayer coupling in a vdW ferromagnet enables interface magnetic interactions to play prominent roles. Therefore, vdW materials offer a perfect platform for investigations of complex magnetic interactions at the interface that contributes to exchange bias. Among all the vdW magnets, FGT is a good candidate as it has a relatively high Curie temperature (T C ) close to room temperature [31,32] and a strong perpendicular magnetic anisotropy, which exhibits potential for magnetic recording and spintronics applications.In this work, we report a unique case of exchange bias in a vdW ferromagnet FGT interfacing with two different antiferromagnets, where one is CrSe with a noncollinear spin texture and the other one is oxidized FGT (O-FGT). Importantly, in this sandwiched O-FGT/FGT/CrSe heterostructure, the exchange bias from the anomalous Hall effect measurement shows a non-antisymmetric dependence (distinct absolute values of exchange bias for field coolings with same magnitude and opposite directions) and the obtained bias field reaches a maximum value of ≈90 mT at 5 K. In our case, two ferromagnet/ antiferromagnet interfaces are formed for generating exchange bias and producing a non-antisymmetric exchange bias. We utilize an intuitive physic model to explain the non-antisymmetric dependence of exchange bias on the cooling fields in this sandwiched ferromagnet FGT. This model is based on the interplay of exchange coupling at the O-FGT/FGT and FGT/ CrSe interfaces.Spintronics applications of thin-film magnets require control and design of specific magnetic properties. Exchange bias, originating from the pinning of spins in a ferromagnet by these of an antiferromagnet, is a part of the highly important elements for spintronics applications. Here, an exchange bias of ≈90 mT in a van der Waals ferromagnet encapsulated by two antiferromagnets at 5 K,...

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“…EB effect was also reported in MnPS 3 /FGT vdW heterostructure. [101] MnPS 3 (MPS) is a Heisenberg-type AFM insulator, [102] namely, the spins in each layer couple with the nearest neighbors antiferromagnetically. Figure 10e shows that the MPS/FGT heterostructure had a shift in R xy with H E of 160 Oe at the cooling field of 10 kOe at 10 K. In addition, the longitudinal resistance (R xx ) had an antisymmetric magnetoresistance, distinct from the common symmetrical hysteresis with a butterfly shape.…”

Section: The Regulation Of Magnetism Via Heterostructure Constructionmentioning

confidence: 99%

“…eÀh) Reproduced with permission. [101] Copyright 2020, American Chemical Society. The exchange effects influenced the spin textures of FGT at the interface T C of FGT was improved by more than 30 K and the coercive field was increased by about 100% [103] materials can remain undamaged by taking advantage of the interface, so the magnetic properties can be modulated without sacrificing the intrinsic properties.…”

Section: The Regulation Of Magnetism Via Heterostructure Constructionmentioning

confidence: 99%

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Structure Engineering of 2D Materials toward Magnetism Modulation

Zhao

Zeng

et al. 2021

Small Structures

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2D magnetic materials have shown great potentials in fundamental research and spintronic devices. However, the discovered 2D magnetic materials are still limited and their monotonous magnetic properties cannot meet the needs of practical applications. Recently, the modulation of magnetism in 2D materials attracted tremendous attention, which can enrich the 2D magnetic material family and extend their application prospects. Structure engineering is one of the most effective ways to realize tunable 2D magnetic properties. Herein, the recent progress on 2D magnetism modulation via structure engineering is summarized. The basic theory of 2D magnetism is introduced at first. Then, the magnetism modulation by structure engineering is classified into two ways: inducing longrange magnetic ordering into nonmagnetic materials and regulating the native magnetism of intrinsic magnetic materials. Moreover, recent progress on magnetism modulation by intercalation, chemical doping, defect engineering, and heterostructure construction is discussed in detail. Finally, the challenges and prospects in the future of 2D magnetism are also provided.

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Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS₃/Fe₃GeTe₂ Stacking Heterostructure

Cited by 61 publications

References 39 publications

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Structure Engineering of 2D Materials toward Magnetism Modulation

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Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure

Cited by 61 publications

References 39 publications

One-Pot Synthesis Enables Magnetic Coupled Cr2Te3/MnTe/Cr2Te3 Integrated Heterojunction Nanorods

One-Pot Synthesis Enables Magnetic Coupled Cr2Te3/MnTe/Cr2Te3 Integrated Heterojunction Nanorods

Manipulating Exchange Bias in a Van der Waals Ferromagnet

Structure Engineering of 2D Materials toward Magnetism Modulation

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Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS₃/Fe₃GeTe₂ Stacking Heterostructure

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods

One-Pot Synthesis Enables Magnetic Coupled Cr₂Te₃/MnTe/Cr₂Te₃ Integrated Heterojunction Nanorods