Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions

Zeng, Yuping; Kuo, Chien-I; Kapadia, Rehan; Hsu, Ching Yi; Javey, Ali; Hu, Chenming

doi:10.1063/1.4812563

Cited by 18 publications

(16 citation statements)

References 19 publications

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“…Another advantage of two dimensional transition metal dichalcogenides is that they can be promising materials for developing BTBT transistors, which enable steeper subthreshold swing and the down scaling of the supply voltage beyond the fundamental thermionic limit [30,31]. As a significant step toward this direction, we have experimentally demonstrated the operation of a backward diode in a WSe 2 :Nb/WSe 2 :Re vertical heterojunction as schematically shown in the top inset of Fig.…”

Section: Demonstration Of Band To Band Tunnelingmentioning

confidence: 99%

Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

et al. 2017

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Transition metal dichalcogenides (TMDs) such as MoS 2 , MoSe 2 , and WSe 2 have emerged as promising two-dimensional semiconductors. Many anticipated applications of these materials require both p-type and n-type TMDs with long term doping stability. Here we report the synthesis of substitutionally doped WSe 2 crystals using Nb and Re as p-and n-type dopants, respectively. Hall coefficient and gate-dependent transport measurements reveal drastically different doping properties between nominally 0.5% Nb-and 0.5% Re-doped WSe 2 . While 0.5% Nb-doped WSe 2 (WSe 2 :Nb) is degenerately hole doped with a nearly temperature independent carrier density of ∼ 10 19 cm −3 , electrons in 0.5% Re-doped WSe 2 (WSe 2 :Re) are largely trapped in localized states below the mobility edge and exhibit thermally activated behavior. Charge transport in both WSe 2 :Nb and WSe 2 :Re is found to be limited by Coulomb scattering from ionized impurities. Furthermore, we have fabricated vertical van der Waals junction diodes consisting of multilayers of WSe 2 :Nb and WSe 2 :Re. Finally, we have demonstrated reverse rectifying behavior as a direct proof of band-to-band tunneling in our WSe 2 :Nb/WSe 2 :Re diodes.

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Section: Demonstration Of Band To Band Tunnelingmentioning

confidence: 99%

Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

et al. 2017

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“…The biased DB is a simple system and the resonant tunneling and negative resistance behavior have been amply and extensively studied, and little or nothing should be added after 50 years of research and applications. However, it turns out that a feature in the negative resistance domain, that appeared in numerous experimental reports, [196,[212][213][214][215][216][217][218][219][220][221][222] has not been well understood, much less predicted. That feature is a shoulder as the one seen, between 0.32 and 0.43 V, in the experimental (black, continuous) curve in Figure 18b) reported by Bowen et al in ref.…”

Section: Multichannel Features In the Negative Resistance Domain Of B...mentioning

confidence: 99%

The Transfer Matrix Method and the Theory of Finite Periodic Systems. From Heterostructures to Superlattices

Pereyra

2021

Physica Status Solidi (b)

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Historically, the physics, energy spectrum, and wave functions of superlattices have had different levels of understanding. Unlike the standard approaches, based on theorems for infinite systems, the theory of finite periodic systems (TFPS) constitutes a genuine quantum approach, with closed analytical results. In this theory the finitene number of unit‐cells is an essential condition, while the number of propagating modes, as well as, the potential profiles (or refractive indices) are arbitrary. In this work, the transfer matrix definitions, symmetry properties, group representations, and relations with the scattering amplitudes are reviewed. The derivation of multichannel matrix polynomials (which reduce to Chebyshev polynomials in the one‐propagating mode limit), analytical formulas for resonant states, energy eigenvalues, eigenfunctions, parity symmetries, and discrete dispersion relations for superlattices with different confinement characteristics are reviewed. After showing the inconsistencies and limitations of hybrid approaches that combine the transfer‐matrix method with Floquet's theorem, some applications of the TFPS to multichannel negative resistance, ballistic transistors, coupled channels transport, spintronics, superluminal, and optical antimatter effects are revisited. Two high‐resolution superlattice related experiments are reviewed: the tunneling time in photonic band‐gap and the optical response of blue‐emitting diodes. It is shown that the TFPS accurately predicts the experimental results.

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“…After the drain metal deposition step, a ∼100 nm thick layer of HSQ resist was spun, exposed by electron beam and developed with MF319. Afterward, the mesa junction etch step was performed with wet-etching, as detailed in [21], to form the structure shown in Fig. 1(e).…”

Section: B Nanofabrication Of Overlap and Underlap Gate Devicesmentioning

confidence: 99%

“…It clearly shows a gate-controlled negative differential resistance behavior, confirming an inter-band tunneling operation. The double peak re- sults from the subbands of the quantized InAs layer, which is sandwiched between the ZrO 2 gate oxide layer and the wideband gap AlSb layer [21]. Performance comparison of published III-V TFETs is shown in Table I (see Refs. [6], [8]- [11], [17], [19], [25], [26]).…”

Section: Electrical Characterization Of Overlap Gate Devicementioning

confidence: 99%

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support

Zeng

Kuo

Hsu

et al. 2015

IEEE Trans. Nanotechnology

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A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nmthin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 μA/μm 2 at V G S = V D S = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.Index Terms-Heterojunction, nanofabrication, TCAD simulation, tunneling barrier, type III (broken gap) band alignment, vertical in-line tunnel FET. 1536-125X

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Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions

Cited by 18 publications

References 19 publications

Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling

The Transfer Matrix Method and the Theory of Finite Periodic Systems. From Heterostructures to Superlattices

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support

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