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The thermal decomposition of C(2)H(5)OH highly diluted in Ar (1 and 3 ppm) has been studied by monitoring H atoms using the atomic resonance absorption spectrometry (ARAS) technique behind reflected shock waves over the temperature range 1450-1760 K at fixed pressure: 1, 1.45, and 2 atm. The rate constant and the product branching fractions have been determined by analyzing temporal profiles of H atoms; the effect of the secondary reactions on the results has been examined by using a detailed reaction mechanism composed of 103 elementary reactions. The apparent rate constant of ethanol decomposition can be expressed as k(1)/s(-1) = (5.28 ± 0.14) × 10(10) exp[-(23,530 ± 980)/T] (T = 1450-1670 K, P = 1-2 atm) without a detectable pressure dependence within the tested pressure range of this study. Branching fractions for producing CH(3) + CH(2)OH (1a) and H(2)O + C(2)H(4) (1b) have been examined by a quantitative measurement of H atoms produced in the successive decompositions of the products CH(2)OH (1a): the pressure dependence of the branching fraction for channel 1a is obtained by a linear least-squares analysis of the experimental data and can be expressed as φ(1a) = (0.71 ± 0.07) - (826 ± 116)/T, (0.92 ± 0.04) - (1108 ± 70)/T, and (1.02 ± 0.10) - (1229 ± 168)/T for T = 1450-1760 K, at P = 0.99, 1.45, and 2.0 atm, respectively. The rate constant obtained in this study is found to be consistent with previous theoretical and experimental results; however, the pressure dependence of the branching fraction obtained in this study is smaller than those of previous theoretical works. Modification of the parameters for the decomposition rate in the falloff region is suggested to be important to improve the practical modeling of the pyrolysis and combustion of ethanol.

The application of silicon mold inserts by micro‐hot embossing molding has been explored in microfluidic chip fabrication. For the mold insert, this study employed an SU‐8 photoresist to coat the silicon wafer. Ultraviolet light was then used to expose the pattern on the SU‐8 photoresist surface. This study replicates the microstructure of the silicon mold insert by micro‐hot embossing molding. Different processing parameters (embossing temperature, embossing pressure, embossing time, and de‐molding temperature) for the cycle‐olefin polymer (COP) film of microfluidic chips are evaluated. The results showed that the most important parameter for replication of molded microfluidic chip is embossing temperature. De‐molding temperature is the most important parameter for surface roughness of the molded microfluidic chip. The microchannel is bonded with a cover by thermal bonding processing to form the sealed microfluidic chip. The bonding temperature is the most important factor in the bonding strength of the sealed microfluidic chip. Copyright © 2009 John Wiley & Sons, Ltd.

Rate coefficients of the reaction O(3P)+C2H5OH in the temperature range 782-1410 K were determined using a diaphragmless shock tube. O atoms were generated by photolysis of SO2 at 193 nm with an ArF excimer laser; their concentrations were monitored via atomic resonance absorption. Our data in the range 886-1410 K are new. Combined with previous measurements at low temperature, rate coefficients determined for the temperature range 297-1410 K are represented by the following equation: k(T)=(2.89+/-0.09)x10(-16)T1.62 exp[-(1210+/-90)/T] cm3 molecule(-1) s(-1); listed errors represent one standard deviation in fitting. Theoretical calculations at the CCSD(T)/6-311+G(3df, 2p)//B3LYP/6-311+G(3df) level predict potential energies of various reaction paths. Rate coefficients are predicted with the canonical variational transition state (CVT) theory with the small curvature tunneling correction (SCT) method. Reaction paths associated with trans and gauche conformations are both identified. Predicted total rate coefficients, 1.60 x 10(-22)T3.50 exp(16/T) cm3 molecule(-1) s(-1) for the range 300-3000 K, agree satisfactorily with experimental observations. The branching ratios of three accessible reaction channels forming CH3CHOH+OH (1a), CH2CH2OH+OH (1b), and CH3CH2O+OH (1c) are predicted to vary distinctively with temperature. Below 500 K, reaction 1a is the predominant path; the branching ratios of reactions 1b,c become approximately 40% and approximately 11%, respectively, at 2000 K.

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