Photocatalytic conversion of carbon dioxide (CO(2)) to hydrocarbons such as methanol makes possible simultaneous solar energy harvesting and CO(2) reduction, two birds with one stone for the energy and environmental issues. This work describes a high photocatalytic conversion of CO(2) to methanol using graphene oxides (GOs) as a promising photocatalyst. The modified Hummer's method has been applied to synthesize the GO based photocatalyst for the enhanced catalytic activity. The photocatalytic CO(2) to methanol conversion rate on modified graphene oxide (GO-3) is 0.172 μmol g cat(-1) h(-1) under visible light, which is six-fold higher than the pure TiO(2).

To synthesize large-area graphene single crystals, we specifically designed a low-pressure chemical vapor deposition (LPCVD) reactor with confined reaction space (L 22 mm × W 13 mm × H 50 μm). Within the confined reaction space, a uniform distribution of reactant concentrations, reduced substrate roughness, and the shift of growth kinetics toward a diffusion-limited regime can be achieved, favoring the preparation of large-area, high-quality graphene single crystals. The gas flow field and mass transport pattern of reactants in the LPCVD system simulated with a finite element method support the advantages of using this confined reaction room for graphene growth. Using this spaceconfined reactor together with the optimized synthesis parameters, we obtained monolayer, highly uniform, and defect-free graphene single crystals of up to ∼0.8 mm in diameter with the field-effect mobility of μ EF ∼ 4800 cm 2 V −1 s −1 at room temperature. In addition, structural design of the confined reaction space by adjusting the reactor's dimensions is of facile controllability and scalability, which demonstrates the superiority and preference of this method for industrial applications.

In this study, we report a novel, one-step synthesis method to fabricate multilayer graphene (MLG)-wrapped copper nanoparticles (CuNPs) directly on various substrates (e.g., polyimide film (PI), carbon cloth (CC), or Si wafer (Si)). The electrical resistivities of the pristine MLG-CuNPs/PI and MLG-CuNPs/Si were measured 1.7 × 10 and 1.4 × 10 Ω·m, respectively, of which both values are ∼100-fold lower than earlier reports. The MLG shell could remarkably prevent the Cu nanocore from serious damages after MLG-CuNPs being exposed to various harsh conditions. Both MLG-CuNPs/PI and MLG-CuNPs/Si retained almost their conductivities after ambient annealing at 150 °C. Furthermore, the flexible MLG-CuNPs/PI exhibits excellent mechanical durability after 1000 bending cycles. We also demonstrate that the MLG-CuNPs/PI can be used as promising source-drain electrodes in fabricating flexible graphene-based field-effect transistor (G-FET) devices. Finally, the MLG-CuNPs/CC was shown to possess high performance and durability toward hydrogen evolution reaction (HER).

A graphene field-effect transistor (G-FET) with the spacious planar graphene surface can provide a large-area interface with cell membranes to serve as a platform for the study of cell membrane-related protein interactions. In this study, a G-FET device paved with a supported lipid bilayer (referred to as SLB/G-FET) was first used to monitor the catalytic hydrolysis of the SLB by phospholipase D. With excellent detection sensitivity, this G-FET was also modified with a ganglioside G-enriched SLB (G-SLB/G-FET) to detect cholera toxin B. Finally, the GM1-SLB/G-FET was employed to monitor amyloid-beta 40 (Aβ40) aggregation. In the early nucleation stage of Aβ40 aggregation, while no fluorescence was detectable with traditional thioflavin T (ThT) assay, the prominent electrical signals probed by G-SLB/G-FET demonstrate that the G-FET detection is more sensitive than the ThT assay. The comprehensive kinetic information during the Aβ40 aggregation could be collected with a G-SLB/G-FET, especially covering the kinetics involved in the early stage of Aβ40 aggregation. These experimental results suggest that SLB/G-FETs hold great potential as a powerful biomimetic sensor for versatile investigations of membrane-related protein functions and interaction kinetics.

A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ~300 μF cm(-2) is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (!5 × 10(10) cm(-2)) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

Direct growth of high-quality graphene on dielectric substrates without a sophisticated transfer process is one of the key challenges to effectively integrate graphene synthesis with the existing semiconductor manufacturing process. In this study, we take advantages offered by a customized reactor to realize the synthesis of uniform transfer-free graphene monolayers on SiO2/Si substrates via the metal-catalytic chemical vapor deposition method. The optimal reactor is designed to be a Ni-covered quartz slit with a confined reaction space (length × width × height = 85 × 13 × 0.55 mm3). The slit structure of this reactor offers a spatially confined environment for effectively suppressing Cu evaporation and modulating the growth kinetics of graphene. In addition, the Ni cover serves as a carbon absorbent for regulating the local concentration of carbon species within the slit reactor, which increases the monolayer content of the produced graphene. With the optimal synthesis protocol, transfer-free graphene with low defects and high monolayer content (>90%) was prepared directly on SiO2/Si substrates as continuous large-area films (1 × 1 cm2) or microscale patterns with sheet resistance and field-effect mobility of 334 Ω/sq and 962 cm2/(V s), respectively.

In this study, we investigate the effects of fluorinated poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) buffer layer on the performance of polymer photovoltaic cells. We demonstrate for the first time, the deterioration of the device performance can be effectively mended by modifying the interface between the active layer and buffer layer with heptadecafluoro-1,1,2,2-tetra-hydro-decyl trimethoxysilane (PFDS) and perfluorononane. Device performance shows a substantial enhancement of short-circuit current from 7.90 to 9.39 mA/cm(2) and fill factor from 27% to 53%. The overall device efficiency was improved from 0.98% to 3.12% for PFDS modified device. The mechanism of S-shape curing is also discussed. In addition, the stability of modified devices shows significant improvement than those without modification. The efficiency of the modified devices retains about half (1.88%) of its initial efficiency (4.1%) after 30 d compared to the unmodified ones (0.61%), under air atmosphere.