Direct
growth of high-quality graphene on dielectric substrates
without a sophisticated transfer process is one of the key challenges
to effectively integrate graphene synthesis with the existing semiconductor
manufacturing process. In this study, we take advantages offered by
a customized reactor to realize the synthesis of uniform transfer-free
graphene monolayers on SiO2/Si substrates via the metal-catalytic
chemical vapor deposition method. The optimal reactor is designed
to be a Ni-covered quartz slit with a confined reaction space (length
× width × height = 85 × 13 × 0.55 mm3). The slit structure of this reactor offers a spatially confined
environment for effectively suppressing Cu evaporation and modulating
the growth kinetics of graphene. In addition, the Ni cover serves
as a carbon absorbent for regulating the local concentration of carbon
species within the slit reactor, which increases the monolayer content
of the produced graphene. With the optimal synthesis protocol, transfer-free
graphene with low defects and high monolayer content (>90%) was
prepared
directly on SiO2/Si substrates as continuous large-area
films (1 × 1 cm2) or microscale patterns with sheet
resistance and field-effect mobility of 334 Ω/sq and 962 cm2/(V s), respectively.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.