Thin film transistors (TFTs) with amorphous silicon films crystallized via continuous-wave green laser at a wavelength of 532 nm exhibit very different electrical characteristics in various crystallization regions, corresponding to the Gaussian energy density distribution of the laser beam. In the center region subjected to the highest energy density, the full melting scheme led to the best crystallinity of the polycrystalline silicon film, resulting in the highest field-effect mobility of 500 cm2 V−1 s−1. In contrast, the edge region that resulted in solid phase crystallization exhibited the worst mobility of 48 cm2 V−1 s−1 for the polycrystalline silicon TFTs.
High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio of 1.6×10 9 . In addition, the thermal stress of ∼800 MPa induced from the CLC process also contributed to the single-crystal-like silicon NW CLC TFTs to achieve an excellent field-effect mobility of up to 900 cm 2 V −1 s −1 .
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.