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The thermal stability and reduction kinetics of graphene oxide were studied by measuring the electrical resistivity of single-layer graphene films at various stages of reduction in high vacuum and by performing temperature programmed desorption (TPD) measurements of multilayer films in ultrahigh vacuum. The graphene oxide was exfoliated from the graphite oxide source material by slow-stirring in aqueous solution, which produces single-layer platelets with an average lateral size of ∼10 µm. From the TPD measurements, it was determined that the primary desorption products of the graphene oxide films for temperatures up to 300 °C are H 2 O, CO 2 , and CO, with only trace amounts of O 2 being detected. Resistivity measurements on individual single-layer graphene oxide platelets resulted in an activation energy of 37 ( 1 kcal/mol. The TPD measurements of multilayer films of graphene oxide platelets give an activation energy of 32 ( 4 kcal/mol.

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Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUVinduced acid generation is therefore needed for the development of higher performance resists.

The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultra-high vacuum system was investigated with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. Attempts to form a graphene overlayer using ethylene at pressures as high as 10 mTorr and substrate temperatures as high as 900 • C resulted in almost no graphene growth. By using an argon overpressure, the growth of epitaxial graphene on Cu(111) was achieved.The suppression of graphene growth without the use of an argon overpressure is attributed to Cu sublimation at elevated temperatures. During the initial stages of growth, a random distribution of rounded graphene islands is observed. The predominant rotational orientation of the islands is within ±1 • of the Cu(111) substrate lattice.

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