1993
DOI: 10.1016/0301-0104(93)80031-4
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Hydroxyl groups on oxide surfaces: NiO(100), NiO(111) and Cr2O3(111)

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Cited by 235 publications
(153 citation statements)
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“…For this reason, water dissociation on metals is often observed only when O is preadsorbed [58], as was observed first on Pt(111) [351]. On non-polar oxide surfaces, such as CoO(100) [342] and NiO(100) [64,344] dissociative adsorption is found to occur only at defects, whereas the corresponding regular surface areas are inert. Dissociative adsorption was observed on Ti 3+ rich Ar + -bombarded surfaces, such as Ti 2 O 3 (047) [352], TiO 2 (100) [353], SrTiO 3 (100) [354], whereas molecular adsorption was observed on the respective stoichiometric regular surfaces.…”
Section: Discussionmentioning
confidence: 93%
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“…For this reason, water dissociation on metals is often observed only when O is preadsorbed [58], as was observed first on Pt(111) [351]. On non-polar oxide surfaces, such as CoO(100) [342] and NiO(100) [64,344] dissociative adsorption is found to occur only at defects, whereas the corresponding regular surface areas are inert. Dissociative adsorption was observed on Ti 3+ rich Ar + -bombarded surfaces, such as Ti 2 O 3 (047) [352], TiO 2 (100) [353], SrTiO 3 (100) [354], whereas molecular adsorption was observed on the respective stoichiometric regular surfaces.…”
Section: Discussionmentioning
confidence: 93%
“…Polar surface planes can be stabilized by hydroxylation, because it reduces excess surface charge and, therefore, the electrostatic surface dipole moment (see Section 2.8). Upon dehydroxylation, these surface planes reconstruct, in order to establish a more stable configuration [64][65][66].…”
Section: Adsorption Processmentioning
confidence: 99%
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“…Polar oxide surfaces are of growing technological importance in a wide range of applications due to their particular properties. These range through such diverse applications as catalysis [25], the newest giant magnetoresistive devices [26] (based on the polar (111) surface of NiO), and in a variety of semiconductor devices [27]. The results and methodology of the current study are therefore of significance in a wide range of applications.…”
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confidence: 94%