Copper oxide as a “self-cleaning” substrate for graphene growth

Magnuson, Carl W.; Kong, Xianghua; Ji, Hengxing; Tan, Cheng; Li, Huifeng; Piner, Richard D.; Ventrice, Carl A.; Ruoff, Rodney S.

doi:10.1557/jmr.2013.388

Cited by 49 publications

(54 citation statements)

References 34 publications

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“…[ 18,24 ] In addition, passivation of the active sites on copper foil prior to the graphene growth, such as oxygen exposure, is expected to enable graphene nucleation in a controllable manner. [ 12,16,27,28 ] These passivators could nevertheless react with the reducing agent (e.g., the reaction between oxygen and hydrogen) to cause the passivated sites to regain their catalytic ability for new nucleation.…”

Section: Doi: 101002/adma201600403mentioning

confidence: 99%

Rapid Growth of Large Single‐Crystalline Graphene via Second Passivation and Multistage Carbon Supply

et al. 2016

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A second passivation and a multistage carbon-source supply (CSS) allow a 50-fold enhancement of the growth rate of large single-crystalline graphene with a record growth rate of 101 μm min(-1) , almost 10 times higher than for pure copper. To this end the CSS is tailored at separate stages of graphene growth on copper foil, combined with an effective suppression of new spontaneous nucleation via second passivation.

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Section: Doi: 101002/adma201600403mentioning

confidence: 99%

Rapid Growth of Large Single‐Crystalline Graphene via Second Passivation and Multistage Carbon Supply

et al. 2016

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“…24 Various cleaning strategies have been shown including annealing in air 25 . This leads to organic solvent molecules adhering to the Cu substrate surface.…”

Section: One-step Graphene Synthesis From Adsorbed Moleculesmentioning

confidence: 99%

Direct synthesis of graphene from adsorbed organic solvent molecules over copper

Pang

Bachmatiuk

et al. 2015

RSC Adv.

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“…Effects related to the presence of copper oxides on the substrates were recently discussed by Hao et al 24 to have a significant influence on the graphene nucleation mechanism. 25,26 The issue of carbon contaminants and its removal by plasma assisted methods was discussed by Kato et al 27 . However, such continuous plasma processes involving atomic hydrogen can alter the graphene structure itself and induce further structural changes and defects.…”

mentioning

confidence: 99%

Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres

Strudwick¹,

Weber²,

Schwab³

et al. 2014

ACS Nano

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The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth.

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Copper oxide as a “self-cleaning” substrate for graphene growth

Abstract: Abstract

Cited by 49 publications

References 34 publications

Rapid Growth of Large Single‐Crystalline Graphene via Second Passivation and Multistage Carbon Supply

Rapid Growth of Large Single‐Crystalline Graphene via Second Passivation and Multistage Carbon Supply

Direct synthesis of graphene from adsorbed organic solvent molecules over copper

Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres

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