Articles you may be interested inA heavy ion implanted pocket 0.10 μm ntype metal-oxide-semiconductor field effect transistor with hybrid lithography (electronbeam/deep ultraviolet) and specific gate passivation process
The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.
In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metal-oxide-semiconductor field-effect transistor (MOSFET) with the p+-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D
it of this sample are superior to all the other samples.
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling Mechanism of nitrogen coimplant for suppressing boron penetration in p +polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
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