The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

Huang, Cheng Tung; Lei, Tan Fu; Chu, C. H.; Shvu, S.H.

doi:10.1109/55.485176

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…Therefore, it is believed that the improvement of thermal stability is due to the retardation of Ni diffusion by nitrogen atoms which can stuff in grain boundaries. [8][9][10][11]…”

Section: Resultsmentioning

confidence: 99%

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Oh¹,

Yun²,

Kim³

et al. 2006

jjap

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In this study, a highly thermal immune Ni–germanosilicide utilizing a 1%-nitrogen-doped nickel and a Co/TiN double capping layer is proposed for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs). It is shown that thermal stability of Ni–germanosilicide is improved a lot by the nitrogen incorporation in Ni–germanosilicide film using the 1%-nitrogen-doped nickel target and Co/TiN double capping layer. Even after the post-silicidation annealing at 600 °C for 30 min, low resistivity Ni–germanosilicide can be achieved. It is believed that the nitrogen atoms in 1%-nitrogen-doped nickel are incorporated in the Ni–germanosilicide during silicidation and formed a nitride compound at the grain boundaries of Ni–germanosilicide and the Ni–germanosilicide/SiGe interface.

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“…Therefore, it is believed that the improvement of thermal stability is due to the retardation of Ni diffusion by nitrogen atoms which can stuff in grain boundaries. [8][9][10][11]…”

Section: Resultsmentioning

confidence: 99%

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Oh¹,

Yun²,

Kim³

et al. 2006

jjap

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show abstract

“…And there are no shifts and changes of distribution in spite of the high temperature post-silicidation annealing. Therefore, it is believed that the improvement of thermal stability is due to the retardation of Ni diffusion by Nitrogen atoms which can stuff in grain boundaries [3][4][5][6]. Figure 6 shows the phase identification using XRD (X-Ray Diffractometer).…”

Section: Cross-sectional Fesem (Field Emission Secondary Electron Micmentioning

confidence: 99%

Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications

Oh¹,

Yun²,

Lee³

et al. 2005

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

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“…Therefore, the poor thermal stability of NiSi should be overcome for its application to nanoscale CMOS processes, particularly for the system on chip (SOC) area, which requires high-temperature processes after the formation of silicide. Therefore, many trials such as, multistructures, 4) alloy target of NiTa, 5) NiPt, 6,7) TiN or Ti capping, heavy ion induced PAI (Pre-Amorphization Implantation) such as As, Ge, or N 2 [8][9][10] methods have been performed to improve thermal stability of NiSi.…”

Section: Introductionmentioning

confidence: 99%

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

Yun

Huang

et al. 2005

Jpn. J. Appl. Phys.

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In this paper, 1%-nitrogen doped nickel was proposed to improve the thermal stability of Ni-silicide for nano-scale N-type Metal Oxide Semiconductor Field Effect Transistor. It is shown that thermal stability of nickel silicide is improved a lot by the Nitrogen incorporation in NiSi layer using the 1%-nitrogen doped nickel target. Even after post-silicidation annealing at 650 C for 30 min, the low resistivity NiSi with low junction leakage current can be achieved. Moreover, improved device characteristics such as threshold voltage, transconductance, and on-off current, subthreshold slope were obtained in 80 nm NMOSFET.

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The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

Cited by 9 publications

References 10 publications

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Highly Thermal Immune Ni GermanoSilicide with Nitrogen-Doped Ni and Co/TiN Double Capping Layer for Nano-Scale CMOS Applications

Novel Nitrogen Doped Ni Self-Alingned Silicide Process for Nanoscale Complementary Metal Oxide Semiconductor Technology

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