Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Abstract

In this study, a highly thermal immune Ni–germanosilicide utilizing a 1%-nitrogen-doped nickel and a Co/TiN double capping layer is proposed for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs). It is shown that thermal stability of Ni–germanosilicide is improved a lot by the nitrogen incorporation in Ni–germanosilicide film using the 1%-nitrogen-doped nickel target and Co/TiN double capping layer. Even after the post-silicidation annealing at 600 °C for 30 min, low resistivity Ni–germanosilicide can be achieved. It is believed that the nitrogen atoms in 1%-nitrogen-doped nickel are incorporated in the Ni–germanosilicide during silicidation and formed a nitride compound at the grain boundaries of Ni–germanosilicide and the Ni–germanosilicide/SiGe interface.

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

“…3,4) Although poor thermal stability is a primary obstacle in applying Ni silicide to nanoscale CMOSFETs, it has been reported that its thermal stability can be improved. [5][6][7][8][9][10][11] Several studies have addressed decreasing the Schottky barrier height (SBH) between the Ni silicide and source/drain to improve device performance by incorporating Pt or Pd [12][13][14] and rare earth (RE) metals such as ytterbium (Yb), erbium (Er), dysprosium (Dy), and terbium (Tb) [15][16][17][18][19][20][21] into the Ni silicide, which would reduce contact resistance. Similarly, their alloys could be used to lower hole and electron SBH, respectively.…”

Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device

“…[1][2][3] When a thin layer of Si is grown on a thick SiGe layer, the thin silicon layer acquires tensile stress due to the lattice mismatch between Si and SiGe, increasing the mobilities of electrons and holes. 4,5) Nickel silicide is considered as a potential candidate for ultrashallow junction technology due to several advantages such as the low-temperature silicidation process, low silicon consumption, and the one-step silicidation. 6) However, nickel silicide has poor thermal stability because it easily agglomerates, which raises its resistance.…”