Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate

Abstract

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling Mechanism of nitrogen coimplant for suppressing boron penetration in p +polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor

A novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF/sub 2/-implanted source/drain extension

“…Unfortunately, fluorine incorporation into the poly-Si gate is unavoidable as a result of BF implant that is often used to simultaneously dope the poly-Si gate and the S/D region. Previously, several methods have been proposed to alleviate the above-mentioned boron penetration problems, including the use of stacked amorphous/poly-Si p-type gate structure [4], [5], nitrogen co-implant into p poly-Si gate [6], and inductive-coupling-nitrogen-plasma process [7]. In this work, we propose a novel gate stack process to eliminate the incorporation of fluorine atoms into the p poly-Si gate while simultaneously preserving the advantage of using BF implant to form ultra-shallow S/D extension.…”