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We show that microtubule polymers can be immobilized selectively on lithographically patterned silane surfaces while retaining their native properties. Silane films were chemisorbed on polished silicon wafers or glass coverslips and patterned using a deep UV lithographic process developed at the Naval Research Laboratory. Hydrocarbon and fluorocarbon alkyl silanes, as well as amino and thiol terminal alkyl silanes, were investigated as substrates for microtubule adhesion with retention of biological activity. Microtubules were found to adhere strongly to amine terminal silanes while retaining the ability to act as substrates for the molecular motor protein kinesin. Aminosilane patterns with linewidths varying from 1 to 50 microns were produced lithographically and used to produce patterns of selectively adhered microtubules. Microtubules were partially aligned on the patterned lines by performing the immobilization in a fluid flow field. Patterns were imaged with atomic force microscopy and differential interference contrast microscopy. Motility assays were carried out using kinesin-coated beads and observed with differential interference contrast microscopy. Kinesin bead movement on the patterned microtubules was comparable to movement on microtubule control surfaces.

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Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports.

The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance–voltage (C–V) and current–density–temperature (J–T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as Ni is deposited on the GaN film, which affects the barrier height markedly. The thermal stability of Ni on GaN is also investigated by annealing these specimens at various temperatures. Specimen annealing at temperatures above 200 °C leads to the formation of nickel nitrides Ni3N and Ni4N at the interface of Ni and GaN. These interfacial compounds change the measured barrier height to 1.0 and 0.8 eV by C–V and J–T methods, respectively. Comparisons of Schottky characteristics of Ni with those of Pt, Pd, Au, and Ti are also discussed.

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