High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Hsu, Hsiao‐Hsuan; Chang, Chun‐Yen; Cheng, Chien‐Hong; Chiou, Shan-Haw; Huang, Chao‐Min

doi:10.1109/led.2013.2290707

Cited by 56 publications

(31 citation statements)

References 15 publications

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“…Thus, after TiO capping, the channel carrier concentration is effectively increased and contributes to high mobility and large drive current under the same applied voltage. Similar mobility enhancement by TiO-based capping layer have been reported and verified in our reported IGZO:Ti/IGZO TFT [21]. It is worth to note that the conduction mechanism of electron transport for amorphous or crystalline IGZO is governed by the percolation hopping conduction [22].…”

Section: Resultssupporting

confidence: 88%

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Hsu

Chiou

Cheng

et al. 2015

J. Display Technol.

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This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of 5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm /V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication. Index Terms-Crystalline phase, indium-gallium-zinc oxide (IGZO), thin-film transistor (TFT), titanium oxide. 1551-319X

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Section: Resultssupporting

confidence: 88%

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Hsu

Chiou

Cheng

et al. 2015

J. Display Technol.

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“…As the stoichiometry recovers with increasing TiO 2 thickness the effect on subsequent a-IGZO layers is reduced. Alternatively, Ti doping has been previously shown to have a gettering effect on a-IGZO carriers [44]; thus Ti diffusion into the a-IGZO could also reduce the carrier concentration. However, as the effect seen here is only observed in those nanolaminates which have ultrathin TiO 2 dielectric spacers, oxygen vacancy diffusion is the more likely cause.…”

Section: Resultsmentioning

confidence: 99%

Increasing the refractive index of materials via nanolamination: a-IGZO/TiO2 nanolaminates

Caffrey

Norton

Coileáin

et al. 2018

Phys. Rev. Materials

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We investigate nanolamination as a means of increasing the refractive index of materials, with a focus on [amorphous InGaZnO (a-IGZO)/TiO 2 ] i nanolaminates as composite transparent conducting oxides with a tunable index. We demonstrate that by periodic layering with TiO 2 the refractive index of a-IGZO can be increased by up to n ≈ 0.39 while the carrier mobility and conductivity retain 70% of their original values. This is shown to be a result of the alignment of the conduction bands of a-IGZO and TiO 2 . We also use optical modeling to verify the integral refractive index behavior of the nanolaminates and outline its range of applicability.

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“…Recently, the oxide-based TFTs driving OLED have become the most promising technology to realize really flexible displays [34][35][36][37][38][39][40][41]. The technological advance in TFTs is a significant factor for promoting the development of such displays [42][43][44][45][46][47][48][49][50]. Researchers around Nomura et al [42], the earliest engaged in this field, have successfully fabricated the first transparent and flexible oxide-based TFTs, which have rapidly attracted the interest of numerous researchers all over the world [51][52][53][54][55][56][57][58][59][60][61].…”

Section: Introductionmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

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High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

Cited by 56 publications

References 15 publications

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Increasing the refractive index of materials via nanolamination: a-IGZO/TiO2 nanolaminates

Research Progress on Flexible Oxide-Based Thin Film Transistors

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