Study of Schottky barriers on <i>n</i>-type GaN grown by low-pressure metalorganic chemical vapor deposition

Guo, J. D.; Feng, Mei; Guo, Ru; Pan, Fu‐Ming; Chang, Chun‐Yen

doi:10.1063/1.114327

Cited by 144 publications

(67 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Therefore, these values are characteristic not only of uniform but also of ideal α-GaN Schottky contacts. Figure 3 also displays the experimental data published by Khan et al [9], Binary et al [10], and Guo et al [11]. These data also confirm the predictions of the MIGS-and-electronegativity model.…”

Section: Discussionsupporting

confidence: 78%

“…and = 2.35 eV for cubic ß-GaN. However, the barrier heights reported here and by others [9] [10] [11] were all obtained with wurtzite rather than zincblende GaN. SiC is another example for such polytypism.…”

Section: Discussionmentioning

confidence: 45%

“…The barrier heights of Ti and Au contacts on GaN were determined by Binari et al to be 0.59 eV and 1.19 eV, respectively [10]. For Pt and Pd contacts, barrier heights of 1.04 eV and 0.94 eV, respectively, were reported [11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Metal Contacts on a-GaN

Kampen¹,

Mönch²

1996

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on Si (111) and GaAs (110) surfaces. The barrier heights of ideal Schottky contacts are characterized by image force lowering of the barrier only. This gives an ideality factor of 1.01. From our data we obtain barrier heights of 0.82 eV and 0.73eV for ideal Ag and Pb contacts on GaN, respectively. The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals. The two important parameters of this MIGS-and-electronegativity model are the charge neutrality level (CNL) of the MIGS and a slope parameter. The CNL may be calculated from the dielectric band gap and using the empirical tight-binding method. The slope parameters are given by the optical dielectric constant of the respective semiconductor. The predictions of the MIGS model for metal/GaN contacts are confirmed by the results presented here and by barrier heights previously reported by others for Au, Ti, Pt, and Pd contacts on GaN.

show abstract

Section: Discussionsupporting

confidence: 78%

Section: Discussionmentioning

confidence: 45%

See 1 more Smart Citation

Metal Contacts on a-GaN

Kampen¹,

Mönch²

1996

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

show abstract

“…Precise and reliable control of the depletion layer width by the Schottky contact without leakage currents is extremely important in these devices. However, GaN-based Schottky interfaces are known to suffer from unusually large leakage currents under reverse bias [1][2][3]. Excess leakage currents through a Schottky gate strongly affects, not only gate-control and power consumption, but also the noise performance in GaN-based FET devices as recently pointed out [4].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of current leakage through metal/n-GaN interfaces

Oyama

Hashizume

Hasegawa

2002

Applied Surface Science

View full text Add to dashboard Cite

Detailed current-voltage-temperature (I-V-T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I-V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1 x 10 17 cm -3 . A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.

show abstract

“…5,6 However, the plasma-induced defects and surface residues that remain after such processes limit their use in the fabrication of highly reliable devices 7,8 as they tend to degrade the optical 9 and electrical properties (e.g., as exhibited by an increase in leakage current and a decrease in breakdown voltage of diodes). 10,11 Therefore, there is a strong demand to develop post-etching processes that eliminate such defects and residues.…”

mentioning

confidence: 99%

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Shang

Kometani

et al. 2012

AIP Advances

View full text Add to dashboard Cite

The effect of in-situ exposure of n-GaN damaged by Cl2 plasma to atomic hydrogen (H radicals) at room temperature was investigated. We found that the PL intensities of the band-edge emission, which had been drastically reduced by plasma-beam irradiation at a Cl ion dose of 5 × 1016 cm−2, recovered to values close to those of as-grown samples after H radical exposure at a dose of 3.8 × 1017 cm−2. XPS revealed the appearance of a peak at a binding energy of 18.3 eV, which is tentatively assigned to Ga-H, and confirmed the removal of Cl after H radical exposure

show abstract

Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition

Cited by 144 publications

References 7 publications

Metal Contacts on a-GaN

Metal Contacts on a-GaN

Mechanism of current leakage through metal/n-GaN interfaces

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

Contact Info

Product

Resources

About