Articles you may be interested inEffects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxidesemiconductor with Ge O 2 surface passivation Appl. Phys. Lett. 93, 073504 (2008);In this paper, fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment was proposed to improve the electrical characterization. TaN-HfO 2 -p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO 2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO 2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.
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