Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate

Abstract

Articles you may be interested inEffects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxidesemiconductor with Ge O 2 surface passivation Appl. Phys. Lett. 93, 073504 (2008);In this paper, fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment was proposed to improve the electrical characterization. TaN-HfO 2 -p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO 2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO 2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.

Fluorination of Al2O3 blocking layer for improving the performance of metal‐oxide‐nitride‐oxide‐silicon flash memory

“…These traps and excess oxygen in the Al 2 O 3 blocking layer degrade the P/E properties and retention characteristic of flash memory devices. On the other hand, it is reported that fluorine treatment can improve the electrical properties and oxide reliability of high-k dielectric materials by reducing their defects [8,9]. To obtain ideal tunnel layer with SiO 2 /HfO 2 / SiO 2 dielectric stack, fluorine incorporation by fluorine ion implantation at different stages of processing has been fully researched [10].…”

Effect of $\hbox{F}_{2}$ Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric

“…In particular, the bias temperature instability is related to the generation of interface traps and bulk traps [1]. It was known that fluorine incorporation in the SiO 2 gate dielectrics improves the electrical and reliability characteristics by replacing Si-H bonds with Si-F bonds [2]- [7]; however, an excess amount of fluorine incorporation increases oxide thickness. It is known that excessive fluorine annealing replaces Si-O bonds with Si-F bonds, which generates reactive oxygen atoms.…”

Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

“…Terai et al reported that the incorporation of fluorine ions into the SiON/Si interface reduced the interface states and decreased the negative-bias temperature instability (NBTI) because of the high binding energy of the Si-F bond [5]. In our previous studies [6], [7], we were able to improve the electrical characteristics (e.g., hysteresis and breakdown voltage) and the reliability of both HfO 2 and Al 2 O 3 by fluorine incorporation. In this letter, we both reduced the NBTI degradation and improved the electrical characteristics of HfMoN/Gd 2 O 3 p-channel metal-oxide-semicondcuctor field-effect transistors (pMOSFETs) by fluorine-ion implantation.…”