Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

Abstract

The effects of self-aligned fluorine-ion implantation on the negative-bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors with HfMoN metal gates and Gd 2 O 3 gate dielectrics were investigated. The threshold voltage V th can be adjusted from −0.8 to −0.02 V by increasing the nitrogen concentration in the HfMoN metal gates. However, this adjustment degrades the NBTI, and consequently, the V th shifts are increased by 140 and 500 mV for samples with low (0%) and high (12%) nitrogen concentration, respectively, in the HfMoN metal gates. This degradation of NBTI was improved by fluorine incorporation.Index Terms-Fluorine, high-k, metal gate, negative-bias temperature instability (NBTI), nitrogen.