Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal–oxide semiconductor field effect transistor

Abstract

Articles you may be interested inA heavy ion implanted pocket 0.10 μm ntype metal-oxide-semiconductor field effect transistor with hybrid lithography (electronbeam/deep ultraviolet) and specific gate passivation process

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

“…This is certainly due to the dissociation of the Si-N and B-N-B bonds that enhances the formation of BN complexes and reduces the diffusion of B atoms. This result is in agreement with the works of Chao et al 33) We notice that the absorption intensity of the sp 3 BN complex is larger than the sp 2 BN one versus annealing conditions, 31) i.e., the concentration of the sp 3 BN complex in the film is larger than the h-BN.…”

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

“…It is known that nitrogen and boron co-implants have been proved beneficial for the performance of Si MOS devices. 14 However, in order to predict N action when coimplanted with n or p-type dopants the exact microscopic mechanisms of nitrogen diffusion and clustering (as a function of implantation ECS Journal of Solid State Science and Technology, 1 (6) P315-P319 (2012) P319 energy) in Ge, in the absence of any other dopant in the substrate, should be first completely clarified.…”

“…15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology. 13,14,17,18,19 However, such a study in the case of germanium is, to our knowledge, still missing.…”

“…In this context the study of anomalous diffusion phenomena of implanted species (apart for common dopants) could monitor indirectly Ge point defects kinetics and interactions with the Ge surface or thin films/Ge interfaces for an understanding of fundamental Ge point defects properties. Nitrogen implantation and diffusion in inert and oxidizing ambient has been extensively studied in silicon [13][14][15][16][17][18][19][20][21][22] where anomalous (non-Fickian) diffusion phenomena takes place at temperatures above 700 • C. Diffusion occurs toward the free Si surface or a SiO 2 /Si interface and is attributed to nitrogen atoms -Si z E-mail: dskar@physics.upatras.gr interstitials interactions as also to the interaction of Si interstitilas with the free Si surface or the SiO 2 /Si interface. 15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology.…”