Deviations from Ohm’s law for electron conductivity in silicon surface inversion layers were observed from 4.2 to 20 K using MOS transistors with different amounts of oxide charges. The measurements were compared with a two−dimensional theory of hot electrons in inversion layers. It was found that above 6 K this theory can well account for the observed non−Ohmic behavior. From a comparison of the theory with experimental results the deformation potential constant ZA for scattering of electrons by acoustic phonons is found to be ZA=7.8±2.3 eV. The hot−electron theory is in apparent disagreement with the experimental results at temperatures below 6 K, which is discussed. At high drain voltages the samples with the largest amount of oxide charges showed a negative differential resistance.
Hg1−xCdxTe epitaxial layers were grown on CdTe substrates by the liquid-phase-epitaxy method in a horizontal open system. A semiclosed rotational boat was developed to prevent Hg loss from the Te-rich growth melt during growth processes. The solid composition of HgTe-rich Hg1−xCdxTe layers can be reproducibly controlled. Through the rotation mechanism, the melt entrapment on the as-grown surface can be avoided. With a small amount of excess Hg added into the growth melt and in situ annealing at 300 °C right after the growth, an n-type epilayer can be obtained. The electron concentration of 3×1015 cm−3 and the electron mobility of 7.5×104 cm2/V s were obtained.
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