New mobility-measurement technique on inverted semiconductor surfaces near the conduction threshold

Shiue, C. C.; Sah, C. T.

doi:10.1103/physrevb.19.2149

Cited by 14 publications

(2 citation statements)

References 18 publications

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“…18 If sufficiently high, surface conductivity could cause the feedback current in SECM to be sensitive to redox processes (e.g., corrosion) 45,46 occurring away from the area probed by the tip. Since lateral surface conductivity of a semiconductor is strongly sensitive to the extent of depletion/inversion/ accumulation in the semiconductor, 47,48 deciphering the SECM feedback response at a semiconductor is not straightforward. 49 Third, the SUME platforms shown here are compatible with use in any solvent/electrolyte system.…”

Section: ■ Discussionmentioning

confidence: 99%

Semiconductor Ultramicroelectrodes: Platforms for Studying Charge-Transfer Processes at Semiconductor/Liquid Interfaces

2018

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Semiconductor ultramicroelectrodes (SUMEs) were prepared by photolithographic patterning of defined pinholes in dielectric coatings on semiconductor wafers. Methods are reported for interpreting their electrochemical response characteristics in the absence of illumination. Radial diffusion is reconciled with the diode equation to describe the full voltammetric response, allowing direct determination of heterogeneous charge-transfer rate constants and surface quality. The voltammetric responses of n-type Si SUMEs were assessed and showed prototypical UME characteristics with obtainable current densities higher than those of conventional macroscopic electrodes. The SUME voltammetry proved highly sensitive to both native and intentionally grown oxides, highlighting their ability to precisely track dynamic surface conditions reliably through electrochemical measurement. Subsequently, electron transfer from the conduction band of n-Si SUMEs to aqueous Ru(NH3)6 3+ was determined to occur near optimal exoergicity. In total, this work validates the SUME platform as a new tool to study fundamental charge-transfer properties at semiconductor/liquid junctions.

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Section: ■ Discussionmentioning

confidence: 99%

Semiconductor Ultramicroelectrodes: Platforms for Studying Charge-Transfer Processes at Semiconductor/Liquid Interfaces

2018

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“…An IBM group has observed values of 2600-3000 cm 2 V -1 s-1 in a remote-doped structure [-61], over a factor of two larger than the theoretical value for bulk silicon. Si n-MOS structures have even lower mobilities than the theoretical bulk value, 500cm 2V-as-1 being regarded as typical [62]. IBM have demonstrated a 0.5 gm gate-length Schottky gate enhancement mode transistor [63] with low gate leakage and a transconductance of 390mS/mm at room temperature.…”

Section: Si Ge and Sige Channel Fetsmentioning

confidence: 97%

Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Whall

Parker

1995

J Mater Sci: Mater Electron

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The continuing massive investment in silicon technology and the unique physical and chemical properties of the Si-SiO2 system will ensure the dominance of silicon in microelectronics well into the 21st century. This momentum stimulates development of new materials which should further enhance the performance of silicon microelectronic circuitry. Such materials must, however, be compatible with silicon processing technologies. Major advances in silicon technology are now in prospect due to breakthroughs in molecular beam epitaxy (MBE) growth which have occurred over the last decade and which have enabled silicon to be alloyed to its nearest neighbours in the periodic table -Ge, C, and Sn. The Si/Sil _× Gex heteroepitaxial material system in particular is emerging as a strong candidate to form a silicon-based heterojunction technology. The incorporation of thin, strained, (pseudomorphic) layers of Sil _xGex in silicon allows significant valence band and conduction band edge misalignments to be realized along with appreciable reductions in bandgap energies. Bandgap engineering-such a powerful tool for modifying semiconducting properties (and previously the reserve of compound semiconductors) -thus becomes accessible to the mainstream microelectronics material. This review considers the dramatic impact SiGe could have on future silicon microelectronics.

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Laterally inhomogeneous charge build–up in CMOS inverters during ionizing irradiation

Terletzki¹,

Boden²,

Wulf³

et al. 1984

Phys. Stat. Sol. (a)

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The build‐up of interface states and oxide fixed charges in CMOS inverters during ionizing irradiation (γ‐60Co, X‐ray, 2.5 MeV electrons) is measured. The interface state spectrum in the inversion region is determined from the transfer characteristics by extending Sabnis' expression. Anomalous behaviour (increase of the transconductance) is found for the p‐channel FET, when UGS(irr) = 0 V: The laterally inhomogeneous field along the gate leads to preferential hole trapping in a small gate oxide region near the drain. This region acts as a short channel FET between the hole‐free gate area already in inversion and the drain. This explanation is confirmed by an apparent increase of the mobility and different ID(UG; UD) characteristics when interchanging source and drain.

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New mobility-measurement technique on inverted semiconductor surfaces near the conduction threshold

Cited by 14 publications

References 18 publications

Semiconductor Ultramicroelectrodes: Platforms for Studying Charge-Transfer Processes at Semiconductor/Liquid Interfaces

Semiconductor Ultramicroelectrodes: Platforms for Studying Charge-Transfer Processes at Semiconductor/Liquid Interfaces

Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Laterally inhomogeneous charge build–up in CMOS inverters during ionizing irradiation

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