Preparation of Hg1−xCdxTe with a semiclosed rotational liquid-phase-epitaxy system

Abstract

Hg1−xCdxTe epitaxial layers were grown on CdTe substrates by the liquid-phase-epitaxy method in a horizontal open system. A semiclosed rotational boat was developed to prevent Hg loss from the Te-rich growth melt during growth processes. The solid composition of HgTe-rich Hg1−xCdxTe layers can be reproducibly controlled. Through the rotation mechanism, the melt entrapment on the as-grown surface can be avoided. With a small amount of excess Hg added into the growth melt and in situ annealing at 300 °C right after the growth, an n-type epilayer can be obtained. The electron concentration of 3×1015 cm−3 and the electron mobility of 7.5×104 cm2/V s were obtained.