Studies of electron screening effects on the electron mobility in silicon surface inversion layers

High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates

“…For a wide temperature range between 275 K and 77 K, the electron mobility remains near 60 000 cm 2 /(V-s) with a slight temperature dependence, then decreases to 43 000 cm 2 /(V-s) at 20 K. 21 This mobility is more than 25% (35%) higher than that of an identical Si-doped InSb epilayer grown on an on-axis GeOI substrate at RT (20 K) (not shown here). This result suggests that the minimization of electron scattering due to the reduction of crystalline defects is responsible for the improvement in electron mobility.…”