Objectification theory has yielded mixed results when utilized to explain male’s body image concerns. This study investigated whether a revised model of objectification theory would represent the processes associated with male’s engagement in muscle dysmorphia (MD) characteristics. Specifically the mediating role of body shame, which has previously been used to explain the psychological consequences of self-objectification among women, was substituted for muscular dissatisfaction to capture the male experience. A sample of 257 male (Mage = 29.7, SD = 11.2), the majority from Australia, completed an online questionnaire assessing measures of internalization of the mesomorphic ideal, body surveillance, self-objectification, muscular dissatisfaction, and MD characteristics. Path analyses were used to investigate the relationships among these variables. Results indicated that internalization of the mesomorphic ideal mediated body surveillance through self-objectification; consistent with previous research on objectification theory. Muscular dissatisfaction mediated the link of body surveillance with MD characteristics. Additionally, muscular dissatisfaction mediated the link between internalization of the mesomorphic ideal and MD characteristics. Taken together, these findings support the utility of objectification theory in understanding the processes under which MD characteristics are likely to emerge.

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SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at 175°C. The oxide lifetime is then plotted as a function of the electric field. The results show the projected oxide lifetime to be > 100 years at an operating field of ~3 MV/cm. Device reliability of 2.0 kV DMOSFETs was studied by stressing the gate with a constant gate voltage of +15 V at a temperature of 175°C, and monitoring the forward I-V characteristics and threshold voltage for device stability. Our very first measurements show very little variation between the pre-stress and post-stress conditions up to 1000 hrs of operation at 175°C. In addition, forward on-current stressing of the MOSFETs show the devices to be stable up to 1000 hrs of operation.

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